NTE3096 Ver la hoja de datos (PDF) - NTE Electronics
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NTE3096 Datasheet PDF : 2 Pages
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NTE3096
Optoisolator
Low LED Drive NPN Transistor Output
Description:
The NTE3096 is a gallium arsenide, infrared emitting diode optically coupled to a silicon phototransistor
in a 6–Lead DIP type package. This device is designed for applications requiring low LED drive current,
high electrical isolation, small package size and low cost such as interfacing and coupling systems,
phase feedback controls, solid–state relays and general purpose switching circuits.
Features:
D High Transfer Ratio with Low LED Drive
D High Electrical Isolation
D Low Collector–Emitter Saturation Voltage
Absolute Maximum Ratings: (TA = +25°C, unless otherwise specified)
Infrared Emitting Diode
Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Forward Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
Peak (Pulse Width 1µsec, 2% Duty Cycle) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Power Dissipation (Negligible Power in Transistor), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW
Derate above 25°C ambient . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3mW/°C
Phototransistor
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current (Continuous), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Power Dissipation (Negligible Power in Transistor), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate above 25°C ambient . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0mW/°C
Total Device
Power Dissipation (Negligible Power in Transistor), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate above 25°C ambient . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0mW/°C
Surge Isolation Voltage (60Hz, Peak AC, 5sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7500V
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 10sec), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C
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