NTE2309 Ver la hoja de datos (PDF) - NTE Electronics

Número de pieza

componentes Descripción

Fabricante

NTE2309

Silicon NPN Transistor High Voltage, High Current Switch

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector–Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0

900 –

–

V

Collector–Emitter Breakdown Voltage V(BR)CBO IC = 5mA, RBE = ∞

800 –

–

V

Emitter–Base Breakdown Voltage

V(BR)EBO IE = 1mA, IC = 0

7

–

–

V

Collector–Emitter Sustaining Voltage VCEO(sus) IC = 6A, IB = 2A, L = 200µH

800 –

–

V

VCEX(sus) IC = 2A, IB1 = 0.4A, L= 1mH,

IB2 = –0.4A, Clamped

800 –

–

V

IC = 1A, IB1 = 0.2A, L= 2mH,

IB2 = –0.2A, Clamped

900 –

–

V

Turn–On Time

Storage Time

ton

VCC = 400V, IC = 4A, IB1 = 0.8A,

–

– 1.0 µs

tstg

IB2 = –1.6A, RL = 100Ω

–

– 3.0 µs

Fall Time

tf

–

– 0.7 µs

.190 (4.82)

.615 (15.62)

.787

(20.0)

C

.591

(15.02)

.126

(3.22)

Dia

.787

(20.0)

B

C

E

.215 (5.47)

Share Link: