BF1102 Ver la hoja de datos (PDF) - Philips Electronics

Número de pieza

componentes Descripción

Fabricante

BF1102

Dual N-channel dual gate MOS-FETs

Philips Electronics 

Philips Semiconductors

Dual N-channel dual gate MOS-FETs

handbook, h0alfpage

crosstalk

level

(dB)

−20

MCD972

−40

−60

−80

0

200

400

600

800 1000

f (MHz)

Active amplifier: VDS = 5 V; VG2 = 4 V; ID = 15 mA.

Non-active amplifier: VDS = VG1-S = 0 V.

Source and load impedances: 50 Ω (both amplifiers).

Tamb = 25 °C.

Fig.19 Crosstalk as a function of frequency:

Output level of non-active amplifier related

to output level of active amplifier; typical

values.

Product specification

BF1102; BF1102R

handbook, full pagewidth

VAGC

R1

10 kΩ

C1

4.7 nF

RGEN

50 Ω

VI

C2

R2

50 Ω

4.7 nF

RG1

VGG

C3

4.7 nF

DUT

L1

≈ 2.2 µH

C4

RL

50 Ω

4.7 nF

VDS

MGS315

2000 Apr 11

Fig.20 Cross-modulation test set-up (for one MOS-FET).

9

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