NTE1449 Ver la hoja de datos (PDF) - NTE Electronics
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NTE1449 Datasheet PDF : 2 Pages
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NTE347
Silicon NPN Transistor
RF Power Output
PO = 3W @ 175MHz
Description:
The NTE347 is designed for 13.6 volt, VHF large signal power amplifier applications required in mili-
tary and industrial equipment operating to 240MHz.
Features:
D Low lead inductance stripline package for easier design and increased broadband capability.
D Balanced Emitter Construction for increased Safe Operating Area. The NTE347 is designed
to withstand an Open or Shorted Load at rated Output Power.
D Specified 13.6 volt, 175MHz Characteristics−
Output Power = 3.0 Watts
Minimum Gain = 8.2dB
Efficiency = 50%
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6A
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
ON CHARACTERISTICS
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)CBO
IC = 200mA, IB = 0
IC = 200mA, IB = 0
IE = 1.0mA, IC = 0
VCB = 15V, IE = 0
18 − − V
36 − − V
4.0 − − V
− − 1.0 mA
DC Current Gain
DYNAMIC CHARACTERISTICS
hFE IC = 100mA, VCE = 5.0Vdc
5.0 − − −
Output Capacitance
Cob VCB = 15V, IE = 0, f = 0.1 to 1.0 MHz − 15 30 pF
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