NTE100 Ver la hoja de datos (PDF) - NTE Electronics
Número de pieza
componentes Descripción
Fabricante
NTE100 Datasheet PDF : 3 Pages
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Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Emitter Cutoff Current
NTE100
IEBO
IC = 0
VEB = 2.5V
–
1 2.5 µA
NTE101
VEB = 25V
–
2
6 µA
Static Forward Current Transfer Ratio
NTE100
hFE
VCE = 0.15V, IC = 12mA
30 100 –
VCE = 0.20V, IC = 24mA
24 110 –
NTE101
VCE = 1V, IC = 10mA
20 100 –
VCE = 0.35V, IC = 200mA
10 100 –
Base–Emitter Voltage
NTE100
VBE
IB = 0.4mA, IC = 12mA
– 0.26 0.35 V
IB = 1mA, IC = 24mA
– 0.30 0.40 V
NTE101
IB = 0.5mA, IC = 10mA
0.15 0.22 0.40 V
Collector–Emitter Saturation Voltage
NTE100
VCE(sat)
IB = 0.4mA, IC = 12mA
– 0.08 0.15 V
IB = 1mA, IC = 24mA
– 0.08 0.20 V
NTE101
IB = 0.5mA, IC = 10mA
– 0.07 0.20 V
Small–Signal Forward Current Transfer Ratio
NTE100
hfe
VCE = 6V IC = 1mA, f = 1kHz
– 135 –
NTE101
VCE = 5V
– 105 –
Output Capacitance
NTE100
Cob
VCB = 6V IE = 0, f = 1MHz
–
9 20 pF
NTE101
VCB = 5V
– 14 20 pF
Switching Characteristics
Delay Time
NTE100
NTE101
Rise Time
Storage Time
NTE100
NTE101
td IC = 10mA, IB(1) = 1.3mA,
IB(2) = 0.7mA, VBE(off) = 0.8V,
RL = 1kΩ
tr
ts
– 0.14 – µs
– 0.07 – µs
– 0.20 – µs
µs
– 0.38 –
– 0.70 – µs
Fall Time
NTE100
tf
NTE101
µs
– 0.19 –
– 0.40 – µs
Stored Base Charge
Qsb IB(1) = 1mA, IC = 10mA
– 800 1400 pcb
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