NP1800SAMCT3G Ver la hoja de datos (PDF) - ON Semiconductor
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NP1800SAMCT3G Datasheet PDF : 7 Pages
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NP−SAMC Series
ELECTRICAL PARAMETER/RATINGS DEFINITIONS
Symbol
Parameter
VDRM
V(BO)
IDRM
I(BO)
IH
VT
IT
ITSM
IPPS
VD
ID
Repetitive Peak Off−state Voltage
Breakover Voltage
Off−state Current
Breakover Current
Holding Current
On−state Voltage
On−state Current
Nonrepetitive Peak On−state Current
Nonrepetitive Peak Impulse Current
Off−state Voltage
Off−state Current
100
−Voltage
+I
IPPS
ITSM
IT
IH
I(BO)
IDRM
VT
Off−State Region
ID
+Voltage
V(BO)
VD
VDRM
−I
Figure 1. Voltage Current Characteristics of TSPD
tr = rise time to peak value
100
Peak
Value
tf = decay time to half value
10
50
Half Value
1
0.1
1
10
100
1000
CURRENT DURATION (s)
Figure 2. Nonrepetitive On−State Current vs. Time
(ITSM)
0
0 tr
tf
TIME (ms)
Figure 3. Nonrepetitive On−State Impulse vs.
Waveform (IPPS)
Detailed Operating Description
The TSPD or Thyristor Surge Protection Device are
specialized silicon based overvoltage protectors, used to
protect sensitive electronic circuits from damaging
overvoltage transient surges caused by induced lightning
and powercross conditions.
The TSPD protects by switching to a low on state voltage
when the specified protection voltage is exceeded. This is
known as a “crowbar” effect. When an overvoltage occurs,
the crowbar device changes from a high−impedance to a
low−impedance state. This low−impedance state then offers
a path to ground, shunting unwanted surges away from the
sensitive circuits.
This crowbar action defines the TSPD’s two states of
functionality: Open Circuit and Short Circuit.
Open Circuit – The TSPD must remain transparent during
normal circuit operation. The device looks like an open
across the two wire line.
Short Circuit – When a transient surge fault exceeds the
TSPD protection voltage threshold, the devices switches on,
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