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NNCD6.8PG Ver la hoja de datos (PDF) - NEC => Renesas Technology

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NNCD6.8PG
NEC
NEC => Renesas Technology NEC
NNCD6.8PG Datasheet PDF : 6 Pages
1 2 3 4 5 6
DATA SHEET
ESD NOISE CLIPPING DIODE
NNCD6.8PG
LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE
NOISE CLIPPING DIODE (QUARTO TYPE: COMMON ANODE)
5-PIN MINI MOLD
DESCRIPTION
The NNCD6.8PG is a diode developed for ESD (Electrostatic
Discharge) absorption. Based on the IEC-61000-4-2 test on
electromagnetic interference (EMI), the diode assures an
endurance of no less than 30 kV, thus making itself most
suitable for external interface circuit protection.
With four elements mounted in the 5-PIN mini mold package,
the product can cope with more high density assembling.
PACKAGE DIMENSION (Unit: mm)
2.8 ± 0.2
1.5
0.65
+0.1
0.15
1
5
2
3
4
FEATURES
Base on the electrostatic discharge immunity test (IEC 61000-4-2),
the product assures the minimum endurance of 30 kV.
With four elements in the MINI MOLD package, the product can
achieve high density and automatic packaging.
ELECTRODE CONNECTION
APPLICATIONS
External interface circuit ESD absorption
Circuits for waveform clipper, surge absorber
MAXIMUM RATINGS (TA = 25°C)
ITEM
SYMBOL
RATING
Power Dissipation
P
200
Surge Reverse Power PRSM
85 (t = 10 µs 1 pulse)
Junction Temperature Tj
150
Storage Temperature Tstg
55 to +150
5
1
2
UNIT
mW
W
oC
oC
4
1 : K1 Cathode 1
2 : A Anode (common)
3 : K2 Cathode 2
4 : K3 Cathode 3
5 : K4 Cathode 4
3
REMARK
Total
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15987EJ2V0DS00 (2nd edition)
Data Published September 2002 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
2002

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