76113DK8 Ver la hoja de datos (PDF) - Intersil

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Fabricante

76113DK8

6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET

Intersil 

HUF76113DK8

Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified

HUF76113DK8

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS

30

V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

30

V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±16

V

Drain Current

Continuous

Continuous

Continuous

(TA=

(TA=

(TA=

211500o00CooCC, V,, VVGGGSSS===1054VV.5))V(()FN(iogNtueorte3e)23.)).(..N..o..te.. ..2..)..

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ID

ID

ID

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM

6

A

1.8

A

1.7

A

Figure 4

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

Figure 6

Power Dissipation (Note 2)

Derate Above 25oC . . . .

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PD

...

2.5

0.02

W

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 150

oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

oC

260

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES:

1. TJ = 25oC to 125oC.

2. 50oC/W measured using FR-4 board at 1 second.

3. 228oC/W measured using FR-4 board with 0.006 in2 footprint at 1000 seconds.

Electrical Specifications TA = 25oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

ON STATE SPECIFICATIONS

BVDSS

IDSS

IGSS

ID = 250µA, VGS = 0V (Figure 12)

VDS = 25V, VGS = 0V

VDS = 25V, VGS = 0V, TC = 150oC

VGS = ±16V

30

-

-

V

-

-

1

µA

-

-

250

µA

-

-

±100

nA

Gate to Source Threshold Voltage

Drain to Source On Resistance

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Ambient

VGS(TH)

rDS(ON)

VGS = VDS, ID = 250µA (Figure 11)

ID = 6A, VGS = 10V (Figures 9, 10)

ID = 1.8A, VGS = 5V (Figure 9)

ID = 1.7A, VGS = 4.5V (Figure 9)

RθJA

Pad Area = 0.76 in2 (Note 2)

Pad Area = 0.027 in2 (See TB377)

Pad Area = 0.006 in2 (See TB377)

1

-

3

V

-

0.026 0.032

Ω

-

0.033 0.041

Ω

-

0.035 0.043

Ω

-

-

50

oC/W

-

-

191

oC/W

-

-

228

oC/W

SWITCHING SPECIFICATIONS (VGS = 4.5V)

Turn-On Time

tON

Turn-On Delay Time

td(ON)

Rise Time

tr

Turn-Off Delay Time

td(OFF)

Fall Time

tf

Turn-Off Time

tOFF

VDD = 15V, ID ≅ 1.7A, RL = 8.8Ω,

VGS = 4.5V, RGS = 18Ω,

(Figure 15)

-

-

110

ns

-

17

-

ns

-

57

-

ns

-

32

-

ns

-

38

-

ns

-

-

105

ns

2

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