DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

NE721S01-T1B Ver la hoja de datos (PDF) - NEC => Renesas Technology

Número de pieza
componentes Descripción
Fabricante
NE721S01-T1B
NEC
NEC => Renesas Technology NEC
NE721S01-T1B Datasheet PDF : 5 Pages
1 2 3 4 5
NE721S01
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VDS
Drain to Source Voltage
V
5
VGDO
Gate to Drain Voltage
V
-6
VGSO
Gate to Source Voltage
V
-6
IDS
Drain Current
mA
IDSS
TCH
TSTG
Channel Temperature
Storage Temperature
°C
125
°C
-65 to +125
PT
Total Power Dissipation mW
250
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
500
400
300
200
100
0
50
100
150
200
250
Ambient Temperature, TA (°C)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
80
VDS = 3 V
60
40
20
0
-4.0
-2.0
0
Gate to Source Voltage, VGS (V)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
80
VGS = 0 V
60
40
VGS = -0.5 V
20
VGS = -1.0 V
0
1
2
3
4
5
Drain to Source Voltage, VDS (V)
-80
-90
-100
-110
-120
-130
-140
-150
-160
0.1
BASE BAND 1/f NOISE vs.
OFFSET FREQUENCY
VDS = 3 V,
IDS = 30 mA
1
10
100
Offset Frequency, kHz

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]