NE76100N Ver la hoja de datos (PDF) - NEC => Renesas Technology
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NE76100N Datasheet PDF : 8 Pages
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NE76100
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VDS
Drain to Source Voltage
V
5
VGD
Gate to Drain Voltage
V
-6
VGS
Gate to Source Voltage
V
-5
IDS
Drain Current
mA
IDSS
TCH
Channel Temperature
°C
175
TSTG
PT2
Storage Temperature
Total Power Dissipation
°C
-65 to +175
mW
350
Notes:
1. Operation in excess of anyone of these parameters may result in
permanent damage.
2. Mounted on an infinite heat sink.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
400
350
300
Infinite
250
Heat sink
200
150
100
50
0
0
25 50 75 100 125 150 175 200
Ambient Temperature, TA (°C)
TYPICAL NOISE PARAMETERS (TA = 25°C)
VDS = 3 V, IDS = 10 mA
FREQ.
(GHz)
NFOPT
(dB)
GA
(dB)
ΓOPT
MAG ANG
Rn/50
1.0
0.55 18.0 0.90
16
0.50
2.0
0.60 15.0 0.82
34
0.48
4.0
0.80 12.0 0.70
65
0.45
6.0
1.15 10.0 0.60
95
0.39
8.0
1.60
8.5 0.52
122
0.38
10.0
2.10
7.5 0.50
150
0.32
12.0
2.60
7.0 0.50
171
0.27
Includes effects from wirebonds. See S-Parameter data for details.
NOISE FIGURE AND ASSOCIATED
GAIN vs. DRAIN CURRENT
VDS = 3 V, f = 4 GHz
2.5
15
GA
14
2
13
12
1.5
11
NF
10
1
0.5
0
10
20
30
40
50
Drain Current, IDS (mA)
9
8
7
60
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
80
VGS
0
60
-0.2
40
-0.4
20
-0.6
0
0
1
2
3
-0.8
-1.0
4
5
Drain to Source Voltage, VDS (V)
TRANSCONDUCTANCE vs.
DRAIN CURRENT VDS = 3 V
75
60
45
30
15
0
0
20
40
60
80
100
Drain Current, IDS (mA)
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