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Número de pieza
componentes Descripción
NE6510179A-T1-A Ver la hoja de datos (PDF) - California Eastern Laboratories.
Número de pieza
componentes Descripción
Fabricante
NE6510179A-T1-A
NEC's 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET
California Eastern Laboratories.
NE6510179A-T1-A Datasheet PDF : 10 Pages
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10
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°
C)
DRAIN CURRENT vs.
DRAIN VOLTAGE
3
2.5
V
GS
=
0V
2.0
-0.2 V
1.5
-0.4 V
1.0
-0.6 V
0.5
-0.8 V
0
0
1
2
-1.0 V
3
4
5
6
Drain Voltage, V
D
(V)
1.0E+07
ARRHENIUS PLOTS vs.
JUNCTION TEMPERATURE
1.0E+06
1.0E+05
E
A
= 1.0
E
V
1.35E+06 Hrs
(T
CH
= 110
°
C)
1.0E+04
1805 Hrs
(T
CH
= 217
°
C)
1.0E+03
1.6 1.8 2 2.2 2.4 2.6 2.8 3
Junction Temperature, T/T
CH
(1/K/1000)
NE6510179A
TRANSCONDUCTANCE AND DRAIN
CURRENT vs. GATE VOLTAGE
2.50
1.00
2.00
0.8
1.50
0.6
1.00
0.4
0.50
0.2
0
0
-1.0
-.80
-.60
-.40
-.20
0.00
Gate Voltage, G
V
(V)
MAXIMUM AVAILABLE GAIN vs.
FREQUENCY
30
25
20
15
2.2 V, 200 mA
10
4.6 V, 300 mA
3.5 V, 150 mA
5
0.1
4.0
Frequency, GHz
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