NE5550234 Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

NE5550234

Silicon Power MOS FET

Renesas Electronics 

NE5550234

TEST CIRCUIT SCHEMATIC FOR 460 MHz

VGS

VDS

IN

50 Ω C10

L10

L11

C11

C12

R1

C1

L1

C1

NE5550234

L20

C20

C22

C21

OUT

50 Ω

COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS

Symbol

C1

C10

C11

C12

C20

C21

C22

R1

L1

L10, L11

L20

<R>

PCB

SMA Connecter

Value

1 μF

27 pF

3.9 pF

18 pF

12 pF

1.5 pF

100 pF

4.7 kΩ

47.2 nH

12 nH

7.8 nH

−

−

Type

GRM31MR71H105KA88L

GRM1882C1H270JA01

GRM1882C1H3R9CZ01

GRM1882C1H180JA01

GRM1882C1H120JA01

GRM1882C1H1R5CZ01

GRM2162C1H101JA01D

1/10 W Chip Resistor

SSM_RG1608PB472

φ 0.4 mm, φ D = 2 mm, 7 Turns

LL1608-FS12NJ

φ 0.4 mm, φ D = 1.4 mm, 3 Turns

R1766, t = 0.8 mm, εr = 4.8, size = 30 × 40 mm

WAKA 01K0790-20

Maker

Murata

Murata

Murata

Murata

Murata

Murata

Murata

SSM

Ohesangyou

TOKO

Ohesangyou

Panasonic

WAKA

COMPONENT LAYOUT OF TEST CIRCUIT FOR 460 MHz

VGS

VDS

C1

C1

R1

C10

L1

C22

IN

L10 L11

C11 C12

L20 C20 C21

OUT

R09DS0039EJ0300 Rev.3.00

Mar 12, 2013

Page 3 of 14

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