NE33284 Ver la hoja de datos (PDF) - NEC => Renesas Technology
Número de pieza
componentes Descripción
Fabricante
NE33284 Datasheet PDF : 5 Pages
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NE33284A
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
VDS
VGS
IDS
IGRF
PIN
TCH
TSTG
PT
PARAMETERS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
RF Input (CW)
Channel Temperature
Storage Temperature
Total Power Dissipation
UNITS RATINGS
V
4.0
V
-3.0
mA
IDSS
µA
280
dBm
15
°C
150
°C -65 to +150
mW
165
Note:
1.Operation in excess of any one of these conditions may result in
permanent damage.
TYPICAL NOISE PARAMETERS (TA = 25°C)
VDS = 2 V, IDS = 10 mA
FREQ.
(GHz)
1
2
4
6
8
10
12
14
16
18
NFOPT
(dB)
0.29
0.31
0.35
0.42
0.52
0.63
0.75
0.90
1.05
1.25
GA
(dB)
21.3
18.3
15.0
13.5
12.2
11.3
10.5
9.9
9.3
8.8
ΓOPT
MAG ANG
0.85
28
0.82
40
0.74
62
0.67
85
0.59
107
0.52
130
0.45
168
0.37 -146
0.30 -100
0.22
-54
Rn/50
0.48
0.27
0.16
0.13
0.10
0.09
0.10
0.14
0.22
0.34
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
300
250
Infinite
200
Heat sink
150
100
Free Air
50
0
0
25 50 75 100 125 150 175 200
Ambient Temperature, TA (°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
50
VGS = 0 V
40
-0.1 V
30
20
-0.2 V
10
0
0
0.5
-0.3 V
-0.4 V
-0.5 V
1
1.5
2
2.5
3
Drain to Source Voltage, VDS (V)
TRANSCONDUCTANCE vs. DRAIN CURRENT
VDS = 2.0 V
120
100
80
60
40
20
0
0
10
20
30
40
50
Drain Current, IDS (mA)
NOISE FIGURE AND GAIN
vs. DRAIN CURRENT
VDS = 2 V, f = 12 GHz
2
16
1.6
14
1.2
12
GA
0.8
0.4
0
0
10
NF
Tuned @ 10 mA only
Tuned @ 10 mA only 8
Tuned @ each IDS
Tuned @ each IDS
6
5 10 15 20 25 30 35 40
Drain Current, IDS (mA)
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