DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

ND2410L Ver la hoja de datos (PDF) - Unspecified

Número de pieza
componentes Descripción
Fabricante
ND2410L Datasheet PDF : 4 Pages
1 2 3 4
ND2406L/2410L, BSS129
Specificationsa
Parameter
Static
Drain-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Gate-Body Leakage
Drain Cutoff Current
Drain-Saturation Currentc
Drain-Source On-Resistancec
Forward Transconductancec
Common Source
Output Conductancec
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switchingd
Turn-On Time
Turn-Off Time
Symbol
Test Conditions
Limits
ND2406L ND2410L
BSS129
Typb Min Max Min Max Min Max Unit
V(BR)DSV
VGS(off)
IGSS
ID(off)
IDSS
rDS(on)
gfs
gos
VGS = –9 V, ID = 10 mA
VGS = –5 V, ID = 10 mA
VGS = –3 V, ID = 250 mA
VDS = 5 V, ID = 10 mA
VDS = 3 V, ID = 1 mA
VDS = 0 V, VGS = "20 V
TJ = 125_C
VDS = 180 V, VGS = –9 V
TJ = 125_C
VDS = 180 V, VGS = –5 V
TJ = 125_C
VDS = 230 V, VGS = –3 V
TJ = 125_C
VDS = 10 V, VGS = 0 V
VGS = 2 V, ID = 30 mA
VGS = 0 V, ID = 30 mA
TJ = 125_C
VGS = 0 V, ID = 14 mA
VDS = 25 V, ID = 250 mA
VDS = 10 V, ID = 30 A
260 240
260
240
260
230
V
–1.5 –4.5 –0.5 –2.5
–0.7
"10
"50
"10
"100
nA
"50
1
200
1
mA
200
0.1
200
350 40
40
mA
3.3
4.5
6
10
W
7.2
15
25
4
20
375
140
mS
110
70
mS
Ciss
70
120
120
Coss
VDS = 25 V, VGS = –5 V
f = 1 MHz
20
30
30
pF
Crss
10
15
15
td(on)
15
tr
VDD = 25 V, RL = 830 W 75
ID ^ 30 mA, VGEN = -5 V
ns
td(off)
RG = 25 W
40
tf
100
Notes
a. TA = 25_C unless otherwise noted.
b. For DESIGN AID ONLY, not subject to production testing.
c. Pulse test: PW v300 ms duty cycle v2%.
d. Switching time is essentially independent of operating temperature.
2
VDDV24
Siliconix
S-52426—Rev. C, 14-Apr-97

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]