NCV8664D50G(2010) Ver la hoja de datos (PDF) - ON Semiconductor

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componentes Descripción

Fabricante

NCV8664D50G
(Rev.:2010)

Very Low Iq Low Dropout Linear Regulator

ON Semiconductor 

IN

Bias Current

Generators

1.3 V

Reference

+

Error

Amp

-

NCV8664

OUT

Thermal

Shutdown

GND

Figure 1. Block Diagram

PIN FUNCTION DESCRIPTION

Pin No.

DPAK/SOT−223 SOIC−8

Symbol

Function

1

2

VIN

Unregulated input voltage; 4.5 V to 45 V.

2

3

GND

Ground; substrate.

3

4

VOUT

Regulated output voltage; collector of the internal PNP pass transistor.

TAB

−

GND

Ground; substrate and best thermal connection to the die.

−

1, 5−8

NC

No Connection.

OPERATING RANGE

Pin Symbol, Parameter

Symbol

Min

Max

Unit

VIN, DC Input Operating Voltage

Junction Temperature Operating Range

MAXIMUM RATINGS

VIN

4.5

+45

V

TJ

−40

+150

°C

Rating

Symbol

Min

Max

Unit

VIN, DC Voltage

VIN

−42

+45

V

VOUT, DC Voltage

VOUT

−0.3

+18

V

Storage Temperature

Tstg

−55

+150

°C

ESD Capability, Human Body Model (Note 1)

VESDHB

4000

−

V

ESD Capability, Machine Model (Note 1)

VESDMIM

200

−

V

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. This device series incorporates ESD protection and is tested by the following methods:

ESD HBM tested per AEC−Q100−002 (EIA/JESD22−A 114C)

ESD MM tested per AEC−Q100−003 (EIA/JESD22−A 115C)

THERMAL RESISTANCE

Parameter

Symbol

Condition

Min

Max

Unit

Junction−to−Ambient

DPAK

SOT−223

SOIC−8 Fused

RqJA

−

101 (Note 2)

°C/W

−

99 (Note 2)

−

145

Junction−to−Case

DPAK

SOT−223

SOIC−8 Fused

RqJC

−

9.0

°C/W

−

17

−

−

2. 1 oz., 100 mm2 copper area.

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