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NCV8664(2006) Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza
componentes Descripción
Fabricante
NCV8664
(Rev.:2006)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
NCV8664 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
IN
Bias Current
Generators
1.3 V
Reference
+
Error
Amp
NCV8664
OUT
Thermal
Shutdown
GND
Figure 1. Block Diagram
PIN FUNCTION DESCRIPTION
Pin No.
Symbol
Function
1
VIN
Unregulated input voltage; 5.5 V to 45 V.
2
GND
Ground; substrate.
3
VOUT
Regulated output voltage; collector of the internal PNP pass transistor.
TAB
GND
Ground; substrate and best thermal connection to the die.
OPERATING RANGE
Pin Symbol, Parameter
Symbol
Min
Max
Unit
VIN, DC Input Operating Voltage
Junction Temperature Operating Range
VIN
5.5
+45
V
TJ
40
+150
_C
MAXIMUM RATINGS
Rating
Symbol
Min
Max
Unit
VIN, DC Voltage
VOUT, DC Voltage
Storage Temperature
ESD Capability, Human Body Model (Note 1)
ESD Capability, Machine Model (Note 1)
VIN
42
+45
V
VOUT
0.3
+16
V
Tstg
55
+150
_C
VESDHB
4000
V
VESDMIM
200
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device series incorporates ESD protection and is tested by the following methods:
ESD HBM tested per AECQ100002 (EIA/JESD22A 114C)
ESD MM tested per AECQ100003 (EIA/JESD22A 115C)
Thermal Resistance
Parameter
JunctiontoAmbient
DPAK
JunctiontoAmbient
SOT223
JunctiontoCase
DPAK
JunctiontoCase
SOT223
2. 1 oz., 100 mm2 copper area.
Symbol
RqJA
RqJA
RqJC
RqJC
Condition
Min
Max
Unit
101 (Note 2)
°C/W
99 (Note 2)
°C/W
9.0
°C/W
17
°C/W
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