NCV8405 Ver la hoja de datos (PDF) - ON Semiconductor

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componentes Descripción

Fabricante

NCV8405

Self-Protected Low Side Driver with Temperature and Current Limit

ON Semiconductor 

NCV8405, NCV8405A

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter

Test Condition

Symbol

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(Note 3)

Zero Gate Voltage Drain Current

VGS = 0 V, ID = 10 mA, TJ = 25°C

VGS = 0 V, ID = 10 mA, TJ = 150°C

(Note 5)

VGS = 0 V, VDS = 32 V, TJ = 25°C

VGS = 0 V, VDS = 32 V, TJ = 150°C

(Note 5)

V(BR)DSS

IDSS

Gate Input Current

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

Gate Threshold Temperature Coefficient

Static Drain−to−Source On−Resistance

VDS = 0 V, VGS = 5.0 V

VGS = VDS, ID = 150 mA

VGS = 10 V, ID = 1.4 A, TJ = 25°C

VGS = 10 V, ID = 1.4 A, TJ = 150°C

(Note 5)

VGS = 5.0 V, ID = 1.4 A, TJ = 25°C

VGS = 5.0 V, ID = 1.4 A, TJ = 150°C

(Note 5)

VGS = 5.0 V, ID = 0.5 A, TJ = 25°C

VGS = 5.0 V, ID = 0.5 A, TJ = 150°C

(Note 5)

IGSSF

VGS(th)

VGS(th)/TJ

RDS(on)

Source−Drain Forward On Voltage

VGS = 0 V, IS = 7.0 A

VSD

SWITCHING CHARACTERISTICS (Note 5)

Turn−ON Time (10% VIN to 90% ID)

Turn−OFF Time (90% VIN to 10% ID)

Slew−Rate ON (70% VDS to 50% VDS)

Slew−Rate OFF (50% VDS to 70% VDS)

VGS = 10 V, VDD = 12 V

ID = 2.5 A, RL = 4.7 W

VGS = 10 V, VDD = 12 V,

RL = 4.7 W

tON

tOFF

−dVDS/dtON

dVDS/dtOFF

SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 4)

Current Limit

VDS = 10 V, VGS = 5.0 V, TJ = 25°C

ILIM

VDS = 10 V, VGS = 5.0 V, TJ = 150°C

(Note 5)

VDS = 10 V, VGS = 10 V, TJ = 25°C

VDS = 10 V, VGS = 10 V, TJ = 150°C

(Note 5)

Temperature Limit (Turn−off)

Thermal Hysteresis

Temperature Limit (Turn−off)

Thermal Hysteresis

VGS = 5.0 V (Note 5)

VGS = 5.0 V

VGS = 10 V (Note 5)

VGS = 10 V

TLIM(off)

DTLIM(on)

TLIM(off)

DTLIM(on)

GATE INPUT CHARACTERISTICS (Note 5)

Device ON Gate Input Current

Current Limit Gate Input Current

Thermal Limit Fault Gate Input Current

VGS = 5 V ID = 1.0 A

VGS = 10 V ID = 1.0 A

VGS = 5 V, VDS = 10 V

VGS = 10 V, VDS = 10 V

VGS = 5 V, VDS = 10 V

VGS = 10 V, VDS = 10 V

IGON

IGCL

IGTL

ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5)

Electro−Static Discharge Capability

Human Body Model (HBM)

ESD

Machine Model (MM)

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

4. Fault conditions are viewed as beyond the normal operating range of the part.

5. Not subject to production testing.

Min

42

42

1.0

6.0

3.0

7.0

4.0

150

150

4000

400

Typ

46

45

0.5

2.0

50

1.6

4.0

90

165

105

185

105

185

1.05

20

110

1.0

0.4

9.0

5.0

10.5

7.5

180

15

165

15

50

400

0.05

0.4

0.22

1.0

Max Unit

51

V

51

2.0

mA

10

100

mA

2.0

V

−mV/°C

100

mW

190

120

210

120

210

V

ms

V/ms

11

A

8.0

13

10

200

°C

185

mA

mA

mA

V

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