NCV8403B Ver la hoja de datos (PDF) - ON Semiconductor
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Fabricante
NCV8403B Datasheet PDF : 15 Pages
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NCV8403A, NCV8403B
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Drain−to−Source Clamped Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
(VGS = 0 Vdc, ID = 250 mAdc, TJ = −40°C to 150°C) (Note 3)
Zero Gate Voltage Drain Current
(VDS = 32 Vdc, VGS = 0 Vdc)
(VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150°C) (Note 3)
Gate Input Current
(VGS = 5.0 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 1.2 mAdc)
Threshold Temperature Coefficient (Negative)
V(BR)DSS
IDSS
IGSS
42
46
51
Vdc
40
45
51
Vdc
mAdc
−
0.6
5.0
−
2.5
−
−
50
125 mAdc
VGS(th)
1.0
1.7
2.2
Vdc
−
5.0
− mV/°C
Static Drain−to−Source On−Resistance (Note 4)
(VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 25°C)
(VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 150°C) (Note 3)
Static Drain−to−Source On−Resistance (Note 4)
(VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 25°C)
(VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 150°C) (Note 3)
Source−Drain Forward On Voltage
(IS = 7.0 A, VGS = 0 V)
RDS(on)
RDS(on)
VSD
mW
−
53
68
−
95
123
mW
−
63
76
−
105
135
−
0.95
1.1
V
SWITCHING CHARACTERISTICS (Note 3)
Turn−ON Time (10% VIN to 90% ID)
Turn−OFF Time (90% VIN to 10% ID)
Turn−ON Time (10% VIN to 90% ID)
Turn−OFF Time (90% VIN to 10% ID)
Slew−Rate ON (20% VDS to 50% VDS)
Slew−Rate OFF (80% VDS to 50% VDS)
VIN = 0 V to 5 V, VDD = 25 V
ID = 1.0 A, Ext RG = 2.5 W
VIN = 0 V to 10 V, VDD = 25 V,
ID = 1.0 A, Ext RG = 2.5 W
Vin = 0 to 10 V, VDD = 12 V,
RL = 4.7 W
tON
tOFF
tON
tOFF
−dVDS/dtON
dVDS/dtOFF
SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5)
Current Limit
VGS = 5.0 V, VDS = 10 V
ILIM
VGS = 5.0 V, TJ = 150°C (Note 3)
Current Limit
VGS = 10 V, VDS = 10 V
ILIM
VGS = 10 V, TJ = 150°C (Note 3)
Temperature Limit (Turn−off)
Thermal Hysteresis
Temperature Limit (Turn−off)
Thermal Hysteresis
VGS = 5.0 Vdc (Note 3)
VGS = 5.0 Vdc
VGS = 10 Vdc (Note 3)
VGS = 10 Vdc
TLIM(off)
DTLIM(on)
TLIM(off)
DTLIM(on)
GATE INPUT CHARACTERISTICS (Note 3)
Device ON Gate Input Current
Current Limit Gate Input Current
Thermal Limit Fault Gate Input Current
VGS = 5 V ID = 1.0 A
VGS = 10 V ID = 1.0 A
VGS = 5 V, VDS = 10 V
VGS = 10 V, VDS = 10 V
VGS = 5 V, VDS = 10 V
IGON
IGCL
IGTL
VGS = 10 V, VDS = 10 V
ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 3)
Electro−Static Discharge Capability
Human Body Model (HBM)
ESD
10
5.0
12
8.0
150
−
150
−
4000
44
84
15
116
2.43
0.83
15
10
17
13
175
15
165
15
50
400
0.1
0.6
0.45
1.5
−
ms
V/ms
20
Adc
15
22
Adc
18
200
°C
−
°C
185
°C
−
°C
mA
mA
mA
−
V
Electro−Static Discharge Capability
Machine Model (MM)
3. Not subject to production testing.
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
5. Fault conditions are viewed as beyond the normal operating range of the part.
ESD
400
−
−
V
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