NCV8403ASTT1G Ver la hoja de datos (PDF) - ON Semiconductor

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componentes Descripción

Fabricante

NCV8403ASTT1G

Self-Protected Low Side Driver with Temperature and Current Limit

ON Semiconductor 

NCV8403A, NCV8403B

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage Internally Clamped

Gate−to−Source Voltage

Drain Current

Continuous

Total Power Dissipation − SOT−223 Version

@ TA = 25°C (Note 1)

@ TA = 25°C (Note 2)

Total Power Dissipation − DPAK Version

@ TA = 25°C (Note 1)

@ TA = 25°C (Note 2)

VDSS

VGS

ID

PD

42

Vdc

"14

Vdc

Internally Limited

W

1.13

1.56

1.32

2.5

Thermal Resistance − SOT−223 Version

Junction−to−Soldering Point

Junction−to−Ambient (Note 1)

Junction−to−Ambient (Note 2)

Thermal Resistance − DPAK Version

Junction−to−Soldering Point

Junction−to−Ambient (Note 1)

Junction−to−Ambient (Note 2)

RqJS

RqJA

RqJA

RqJS

RqJA

RqJA

°C/W

12

110

80

2.5

95

50

Single Pulse Inductive Load Switching Energy

(VDD = 25 Vdc, VGS = 5.0 V, IL = 2.8 A, L = 120 mH, RG = 25 W)

EAS

470

mJ

Load Dump Voltage (VGS = 0 and 10 V, RI = 2.0 W, RL = 4.5 W, td = 400 ms)

VLD

55

V

Operating Junction Temperature

TJ

−40 to 150

°C

Storage Temperature

Tstg

−55 to 150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. Surface mounted onto minimum pad size (0.412″ square) FR4 PCB, 1 oz cu.

2. Mounted onto 1″ square pad size (1.127″ square) FR4 PCB, 1 oz cu.

+

ID

IG

+

VGS

GATE

DRAIN

SOURCE

VDS

−

−

Figure 1. Voltage and Current Convention

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