NCV8402DDR2G Ver la hoja de datos (PDF) - ON Semiconductor
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NCV8402DDR2G Datasheet PDF : 10 Pages
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NCV8402D
TYPICAL PERFORMANCE CURVES
1.2
1.1
ID = 150 mA
1.1
VGS = VDS
1
−40°C
1
0.9
25°C
0.9
0.8
100°C
0.8
0.7
0.6
−40 −20 0 20 40 60 80 100 120 140
T (°C)
Figure 14. Normalized Threshold Voltage vs.
Temperature
0.7
150°C
0.6
VGS = 0 V
0.5
1 2 3 4 5 6 7 8 9 10
IS (A)
Figure 15. Source−Drain Diode Forward
Characteristics
200
ID = 2.5 A
VDD = 12 V
150
RG = 0 W
100
50
tf
td(off)
tr
td(on)
0
3
4
5
6
7
8
9
10
VGS (V)
Figure 16. Resistive Load Switching Time vs.
Gate−Source Voltage
1
ID = 2.5 A
VDD = 12 V
0.8 RG = 0 W
0.6
0.4
0.2
−dVDS/dt(on)
dVDS/dt(off)
0
3
4
5
6
7
8
9
10
VGS (V)
Figure 17. Resistive Load Switching
Drain−Source Voltage Slope vs. Gate−Source
Voltage
100
ID = 2.5 A
VDD = 12 V
75
tr, (VGS = 5 V)
td(off), (VGS = 10 V)
50
tf, (VGS = 10 V)
tf, (VGS = 5 V)
td(off), (VGS = 5 V)
25
tr, (VGS = 10 V)
td(on), (VGS = 5 V)
0
td(on), (VGS = 10 V)
0
400
800
1200
1600
2000
RG (W)
Figure 18. Resistive Load Switching Time vs.
Gate Resistance
1
0.8
−dVDS/dt(on), VGS = 10 V
0.6
0.4
dVDS/dt(off), VGS = 5 V dVDS/dt(off), VGS = 10 V
0.2
−dVDS/dt(on), VGS = 5 V
0
ID = 2.5 A
VDD = 12 V
0
500
1000
1500
2000
RG (W)
Figure 19. Drain−Source Voltage Slope during
Turn On and Turn Off vs. Gate Resistance
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