NCV8402D Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza

componentes Descripción

Fabricante

NCV8402D

Dual Self-Protected Low-Side Driver with Temperature and Current Limit

ON Semiconductor 

NCV8402D

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage Internally Clamped

VDSS

42

V

Drain−to−Gate Voltage Internally Clamped

(RG = 1.0 MW)

VDGR

42

V

Gate−to−Source Voltage

VGS

"14

V

Continuous Drain Current

ID

Internally Limited

Power Dissipation

@ TA = 25°C (Note 1)

PD

@ TA = 25°C (Note 2)

0.8

W

1.62

Thermal Resistance

Junction−to−Ambient Steady State (Note 1)

Junction−to−Ambient Steady State (Note 2)

RqJA

RqJA

157

°C/W

77

Single Pulse Drain−to−Source Avalanche Energy

(VDD = 32 V, VG = 5.0 V, IPK = 1.0 A, L = 300 mH, RG(ext) = 25 W)

EAS

150

mJ

Load Dump Voltage

(VGS = 0 and 10 V, RI = 2.0 W, RL = 9.0 W, td = 400 ms)

VLD

87

V

Operating Junction and Storage Temperature

TJ, Tstg

−55 to 150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. Surface−mounted onto min pad FR4 PCB, (Cu area = 40 sq. mm, 1 oz.).

2. Surface−mounted onto 1″ sq. FR4 board (Cu area = 625 sq. mm, 2 oz.).

+

ID

IG

+

VGS

GATE

DRAIN

SOURCE

VDS

−

−

Figure 1. Voltage and Current Convention

http://onsemi.com

2

Share Link: