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NCP699SN30T1G Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza
componentes Descripción
Fabricante
NCP699SN30T1G
ON-Semiconductor
ON Semiconductor ON-Semiconductor
NCP699SN30T1G Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
NCP699
ELECTRICAL CHARACTERISTICS (Vin = Vout(nom.) + 1.0 V, Venable = Vin, Cin = 1.0 mF, Cout = 1.0 mF, TA = 25°C,
unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (Iout = 10 mA, TA = 40°C to 85°C)
1.3 V
1.4 V
1.5 V
1.8 V
2.5 V
2.8 V
2.9 V
3.0 V
3.1 V
3.3 V
3.4 V
4.5 V
5.0 V
Line Regulation (Iout = 10 mA)
1.3 V4.4 V (Vin = Vout(nom.) + 1.0 V to 6.0 V)
4.5 V5.0 V (Vin = 5.5 V to 6.0 V)
Load Regulation (Iout = 1.0 mA to 150 mA)
Output Current Limit
1.3 V3.9 V (Vin = Vout(nom.) + 2.0 V)
4.0 V5.0 V (Vin = 6.0 V)
Dropout Voltage (Iout = 150 mA,
Measured at Vout = Vout(nom) 3.0%)
1.3 V
1.4 V
1.5 V
1.8 V
2.5 V
2.8 V
2.9 V
3.0 V
3.1 V
3.3 V
3.4 V
4.5 V 5.0 V
Disable Current (TA = 40°C to 85°C)
(Enable Input = 0 V)
Vout
Regline
Regload
Io(nom.)
VinVout
DIS
1.261
1.358
1.455
1.746
2.425
2.716
2.813
2.910
3.007
3.201
3.298
4.365
4.850
150
150
1.3
1.4
1.5
1.8
2.5
2.8
2.9
3.0
3.1
3.3
3.4
4.5
5.0
1.0
1.0
0.3
240
240
800
750
690
570
400
360
350
340
330
320
300
240
0.03
1.339
1.442
1.545
1.854
2.575
2.884
2.987
3.090
3.193
3.399
3.502
4.635
5.150
3.0
3.0
0.8
900
850
750
620
450
420
420
400
400
360
360
300
1.0
V
mV/V
mV/mA
mA
mV
mA
Ground Current (TA = 40°C to 85°C)
(Enable Input = Vin, Iout = 1.0 mA to Io(nom.))
Output Short Circuit Current (Vout = 0 V)
1.3 V3.9 V (Vin = Vout(nom.) + 2.0 V)
4.0 V5.0 V (Vin = 6.0 V)
Output Voltage Noise (f = 100 Hz to 100 kHz)
Iout = 30 mA, Cout = 1 mF
Ripple Rejection
(f = 120 Hz, 15 mA)
(f = 1.0 kHz, 15 mA)
Enable Input Threshold Voltage (TA = 40°C to 85°C)
(Voltage Increasing, Output Turns On, Logic High)
(Voltage Decreasing, Output Turns Off, Logic Low)
Output Voltage Temperature Coefficient
3. Maximum package power dissipation limits must be observed.
IGND
Iout(max)
Vn
RR
Vth(en)
TC
150
150
0.95
40
300
300
100
55
50
"100
mA
90
mA
600
600
mVrms
dB
V
0.3
ppm/°C
PD
+
TJ(max) *TA
RqJA
4. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
http://onsemi.com
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