NCP603(2007) Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
NCP603
(Rev.:2007)
(Rev.:2007)
ON Semiconductor
NCP603 Datasheet PDF : 13 Pages
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NCP603
ELECTRICAL CHARACTERISTICS (Vin = 1.750 V, Vout = 1.250 V (adjustable version)), (Vin = Vout + 0.5 V (fixed version)),
Cin = Cout =1.0 mF, for typical values TA = 25°C, for min/max values TA = -40°C to 125°C, unless otherwise specified.) (Note 10)
Characteristic
Symbol
Test Conditions
Min
Typ
Max Unit
Output Noise Voltage (Note 11)
Output Short Circuit Current
Dropout Voltage
1.3 V
1.5 V
1.8 V
2.7 V to 5.0 V
Vn
f = 10 Hz to 100 kHz
Isc
VDO
Measured at: Vout – 2.0%
Iout = 150 mA
-
50
-
mVrms
500
650
900
mA
mV
-
175
250
-
150
225
-
125
175
-
75
125
Dropout Voltage
1.3 V
1.5 V
1.8 V
2.7 V to 5.0 V
VDO
Measured at: Vout – 2.0%
Iout = 300 mA
mV
-
375
480
-
350
400
-
245
340
-
157
230
Output Current Limit
Iout(max)
300
650
-
mA
General
Disable Current
Ground Current
IDIS
IGND
ENABLE = 0 V, Vin = 6 V
-40°C ≤ TA ≤ 85°C
ENABLE = 0.9 V,
Iout = 1.0 mA to 300 mA
-
0.01
1.0
mA
-
145
180
mA
Thermal Shutdown Temperature (Note 11)
Thermal Shutdown Hysteresis (Note 11)
ADJ Input Bias Current
Chip Enable
ENABLE Input Threshold Voltage
Voltage Increasing, Logic High
TSD
TSH
IADJ
Vth(EN)
-
175
-
°C
-
10
-
°C
-0.75
-
0.75
mA
V
0.9
-
-
Voltage Decreasing, Logic Low
-
-
0.4
Enable Input Bias Current (Note 11)
Timing
Output Turn On Time (Note 11)
1.25 V to 3.5 V
5.0 V
IEN
tEN
ENABLE = 0 V to Vin
-
3.0
100
nA
ms
-
15
25
-
30
50
10. Performance guaranteed over the indicated operating temperature range by design and/or characterization, production tested at TJ = TA =
25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
11. Values based on design and/or characterization.
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