NCP3020A Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza

componentes Descripción

Fabricante

NCP3020A

Synchronous PWM Controller

ON Semiconductor 

NCP3020A, NCP3020B, NCV3020A, NCV3020B

ELECTRICAL CHARACTERISTICS (−40°C < TJ < +125°C, VCC = 12 V, for min/max values unless otherwise noted)

Characteristic

Conditions

Min

Typ

Max

Unit

GATE DRIVERS AND BOOST CLAMP

HSDRV Pullup Resistance

TJ = 25°C, VCC = 8 V, VBST = 7.5 V, VSW = GND

5.0

11

20

W

100 mA out of HSDR pin

HSDRV Pulldown Resistance

TJ = 25°C, VCC = 8 V, VBST = 7.5 V, VSW = GND

2.0

5.0

11.5

W

100 mA into HSDR pin

LSDRV Pullup Resistance

TJ = 25°C, VCC = 8 V, VBST = 7.5 V, VSW = GND

5.0

9.0

16

W

100 mA out of LSDR pin

LSDRV Pulldown Resistance

TJ = 25°C, VCC = 8 V, VBST = 7.5 V, VSW = GND

1.0

3.0

6.0

W

100 mA into LSDR pin

HSDRV Falling to LSDRV Rising

Delay

VIN = 12 V, VSW = GND, VCOMP = 1.3 V

50

80

110

ns

LSDRV Falling to HSDRV Rising

Delay

VIN = 12 V, VSW = GND, VCOMP = 1.3 V

60

80

120

ns

Boost Clamp Voltage

THERMAL SHUTDOWN

Thermal Shutdown

VIN = 12 V, VSW = GND, VCOMP = 1.3 V

5.5

7.5

9.6

V

(Notes 4 and 7)

−

165

−

°C

Hysteresis

(Notes 4 and 7)

−

20

−

°C

4. Guaranteed by design.

5. The voltage sensed across the high side MOSFET during conduction.

6. This assumes 100 pF capacitance to ground on the COMP Pin and a typical internal Ro of > 10 MW.

7. This is not a protection feature.

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