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NCP3020A Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza
componentes Descripción
Fabricante
NCP3020A
ON-Semiconductor
ON Semiconductor ON-Semiconductor
NCP3020A Datasheet PDF : 23 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
NCP3020A, NCP3020B, NCV3020A, NCV3020B
ELECTRICAL CHARACTERISTICS (40°C < TJ < +125°C, VCC = 12 V, for min/max values unless otherwise noted)
Characteristic
Conditions
Min
Typ
Max
Unit
Input Voltage Range
4.7
28
V
SUPPLY CURRENT
VCC Supply Current
NCP3020A
VCC Supply Current
NCP3020B
VFB = 0.55 V, Switching, VCC = 4.7 V
VFB = 0.55 V, Switching, VCC = 28 V
VFB = 0.55 V, Switching, VCC = 4.7 V
VFB = 0.55 V, Switching, VCC = 28 V
5.5
8.0
mA
7.0
11
mA
5.9
10
mA
7.8
13
mA
UNDER VOLTAGE LOCKOUT
UVLO Rising Threshold
UVLO Falling Threshold
VCC Rising Edge
VCC Falling Edge
4.0
4.3
4.7
V
3.5
3.9
4.3
V
OSCILLATOR
Oscillator Frequency NCP3020A
TJ = +25°C, 4.7 V v VCC v 28 V
250
300
350
kHz
TJ = 40°C to +125°C, 4.7 V v VCC v 28 V
240
300
360
kHz
Oscillator Frequency NCP3020B
TJ = +25°C, 4.7 V v VCC v 28 V
550
600
650
kHz
TJ = 40°C to +125°C, 4.7 V v VCC v 28 V
530
600
670
kHz
RampAmplitude Voltage
Vpeak Valley (Note 4)
1.5
V
Ramp Valley Voltage
0.46
0.70
0.88
V
PWM
Minimum Duty Cycle
Maximum Duty Cycle
NCP3020A
NCP3020B
(Note 4)
7.0
%
80
84
%
75
80
Soft Start Ramp Time NCP3020A
NCP3020B
VFB = VCOMP
6.8
ms
4.4
ERROR AMPLIFIER (GM)
Transconductance
Open Loop dc Gain
Output Source Current
Output Sink Current
FB Input Bias Current
Feedback Voltage
COMP High Voltage
COMP Low Voltage
OUTPUT VOLTAGE FAULTS
Feedback OOV Threshold
Feedback OUV Threshold
0.9
1.4
1.9
mS
(Notes 4 and 6)
70
dB
VFB = 545 mV
VFB = 655 mV
45
75
100
mA
45
75
100
mA
0.5
500
nA
TJ = 25°C
0.591
0.6
0.609
V
4.7 V < VCC < VIN < 28 V, 40°C < TJ < +125°C 0.588
0.6
0.612
V
VFB = 0.55 V
VFB = 0.65 V
4.0
4.4
5.0
V
72
250
mV
0.66
0.75
0.84
V
0.42
0.45
0.48
V
OVERCURRENT
ISET Source Current
7.0
13
18
mA
Current Limit Set Voltage (Note 5)
TJ = 25°C, RSET = 22.5 kW
140
240
360
mV
4. Guaranteed by design.
5. The voltage sensed across the high side MOSFET during conduction.
6. This assumes 100 pF capacitance to ground on the COMP Pin and a typical internal Ro of > 10 MW.
7. This is not a protection feature.
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