DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

NCP3012 Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza
componentes Descripción
Fabricante
NCP3012
ON-Semiconductor
ON Semiconductor ON-Semiconductor
NCP3012 Datasheet PDF : 26 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
NCP3012
ABSOLUTE MAXIMUM RATINGS (measured vs. GND pin 8, unless otherwise noted)
High Side Drive Boost Pin
Rating
Symbol
BST
VMAX
45
VMIN
0.3
Unit
V
Boost to VSW differential voltage
COMP
BSTVSW
13.2
0.3
V
COMP
5.5
0.3
V
Enable
EN
5.5
0.3
V
Feedback
FB
5.5
0.3
V
HighSide Driver Output
HSDR
40
0.3
V
LowSide Driver Output
LSDR
13.2
0.3
V
Power Good
PG
5.5
0.3
V
Synchronization
SYNC
5.5
0.3
V
Main Supply Voltage Input
External Reference
VCC
VREF
40
0.3
V
5.5
0.3
V
Switch Node Voltage
Maximum Average Current
VCC, BST, HSDRV, LSDRV, VSW, GND
REF
EN
SYNC
PG
VSW
Imax
40
0.6
V
mA
130
7.1
2.5
11
4
Operating Junction Temperature Range (Note 1)
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics (Note 2)
TSSOP14 Plastic Package
Thermal Resistance JunctiontoAir
Lead Temperature Soldering (10 sec): Reflow (SMD styles only) PbFree
(Note 3)
TJ
TJ(MAX)
Tstg
RqJA
RF
40 to +140
+150
55 to +150
190
260 Peak
°C
°C
°C
°C/W
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The maximum package power dissipation limit must not be exceeded.
TJ(max) * TA
PD +
RqJA
2. When mounted on minimum recommended FR4 or G10 board
3. 60180 seconds minimum above 237°C.
http://onsemi.com
4

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]