NBSG111(2007) Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
NBSG111
(Rev.:2007)
(Rev.:2007)
ON Semiconductor
NBSG111 Datasheet PDF : 11 Pages
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NBSG111
Table 6. DC CHARACTERISTICS, INPUT WITH RSPECL OUTPUT VCC = 2.5 V; VEE = 0 V (Note 5)
−40°C
25°C
70°C
Symbol
IEE
VOH
VOUTPP
VIH
Characteristic
Negative Power Supply Current
Output HIGH Voltage (Note 6)
Output Voltage Amplitude
Input HIGH Voltage
(Single−Ended) (Notes 8 and 9)
Min Typ Max
70
85 110
1365 1520 1615
305 420 545
VTHR VCC − VCC
+ 75 1000*
Min Typ Max
70
85 110
1410 1530 1660
305 420 545
VTHR VCC − VCC
+ 75 1000*
Min Typ Max
70
85 110
1435 1560 1685
305 420 545
VTHR VCC − VCC
+ 75 1000*
Unit
mA
mV
mV
mV
VIL
Input LOW Voltage
(Single−Ended) (Notes 8 and 10)
VIH − VCC − VTHR VIH − VCC − VTHR VIH − VCC − VTHR mV
2500 1400* − 75 2500 1400* − 75 2500 1400* − 75
VBB
PECL Output Voltage Reference
1025 1100 1265 1025 1100 1265 1025 1100 1265 mV
VIHCMR Input HIGH Voltage Common Mode
1.2
Range (Differential Configuration) (Note 7)
2.5 1.2
2.5 1.2
2.5 V
VMM
RTIN
IIH
IIL
LVCMOS Output Voltage Reference
mV
(@ 2.5 VCC) 1050 1250 1450 1050 1250 1450 1050 1250 1450
Internal Input Termination Resistor
45
50
55
45
50
55
45
50
55
W
Input HIGH Current (@ VIH)
Input LOW Current (@ VIL)
30 100
25 100
30 100
25 100
30 100 mA
25 100 mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
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