NBB-400 Ver la hoja de datos (PDF) - RF Micro Devices

Número de pieza

componentes Descripción

Fabricante

NBB-400

CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 8GHz

RF Micro Devices 

NBB-400

Absolute Maximum Ratings

Parameter

Rating

Unit

RF Input Power

+20

dBm

Power Dissipation

300

mW

Device Current

70

mA

Channel Temperature

200

°C

Operating Temperature

-45 to +85

°C

Storage Temperature

-65 to +150

°C

Exceeding any one or a combination of these limits may cause permanent damage.

Caution! ESD sensitive device.

RF Micro Devices believes the furnished information is correct and accurate

at the time of this printing. However, RF Micro Devices reserves the right to

make changes to its products without notice. RF Micro Devices does not

assume responsibility for the use of the described product(s).

Parameter

Overall

Small Signal Power Gain, S21

Gain Flatness, GF

Input and Output VSWR

Bandwidth, BW

Output Power @

-1dB Compression, P1dB

Noise Figure, NF

Third Order Intercept, IP3

Reverse Isolation, S12

Device Voltage, VD

Gain Temperature Coefficient,

δGT/δT

MTTF versus Temperature

@ ICC=50mA

Case Temperature

Junction Temperature

MTTF

Thermal Resistance

θJC

Specification

Min.

Typ.

Max.

15.5

16.7

16.5

16.0

12.5

13.5

±0.8

1.45:1

1.30:1

1.90:1

7.5

13.0

14.6

13.5

4.3

+28.1

-17.5

3.6

3.9

4.2

-0.0015

85

131

>1,000,000

251

Unit

dB

dB

dB

dB

dB

GHz

dBm

dBm

dBm

dB

dBm

dB

V

dB/°C

Condition

VD=+3.9V, ICC=47mA, Z0=50Ω, TA=+25°C

f=0.1GHz to 1.0GHz

f=1.0GHz to 4.0GHz

f=4.0GHz to 6.0GHz

f=6.0GHz to 8.0GHz

f=0.1GHz to 5.0GHz

f=0.1GHz to 4.0GHz

f=4.0GHz to 6.0GHz

f=6.0GHz to 12.0GHz

BW3 (3dB)

f = 2.0 GHz

f = 6.0 GHz

f = 9.0 GHz

f = 3.0 GHz

f = 2.0 GHz

f=0.1GHz to 12.0GHz

°C

°C

hours

°C/W

J---T-----–----T----C---A---S---E-

VD ⋅ ICC

=

θJC(°C ⁄ Watt)

4-34

Rev A5 031106

Share Link: