NAND512R4M3 Ver la hoja de datos (PDF) - STMicroelectronics

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NAND512R4M3

256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP

STMicroelectronics 

Summary description

NAND256-M, NAND512-M, NAND01G-M

Table 2.

Signal Names: NAND Flash & 1 x SDR LPSDRAM

NAND Flash

I/O0-I/O7

Data Inputs/Outputs for x8 devices

I/O8-I/O15

Data Inputs/Outputs for x16 devices

AL

Address Latch Enable

CL

Command Latch Enable

EF

Chip Enable

R

Read Enable

RB

Ready/Busy (open-drain output)

WF

Write Enable

WP

Write Protect

VDDF

VSSF

Supply Voltage

Ground

SDR LPSDRAM

A0-A12

Row Address: RA0-RA11

Column Address: CA0-CA8

Auto-precharge flag: A10

BA0-BA1

Bank Address

DQ0-DQ15

Data Inputs/Outputs

K

Clock Input

KE

Clock Enable Input

ED

WD

RAS

Chip Select inputs

Write Enable Input

Row Address Strobe Input

CAS

Column Address Strobe Input

DQM0

Upper DQ Mask Enable Output

DQM1

Lower DQ Mask Enable Output

VDDD

VDDQD

VSSD

VSSQD

NC

Supply Voltage

Input/Output Supply Voltage

Ground

Input/Output Ground

Not Connected Internally

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