HYS72V16220GU Ver la hoja de datos (PDF) - Infineon Technologies

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Fabricante

HYS72V16220GU

3.3 V 8M × 64/72-Bit 1 Bank SDRAM Module, 3.3 V 16M × 64/72-Bit 2 Bank SDRAM Module

Infineon Technologies 

HYS 64(72)V8200/16220GU-8/-10

SDRAM Modules

DC Characteristics

TA = 0 to 70 °C; VSS = 0 V; VDD, VDDQ = 3.3 V ± 0.3 V

Parameter

Input high voltage

Input low voltage

Output high voltage (IOUT = – 2.0 mA)

Output low voltage (IOUT = 2.0 mA)

Input leakage current, any input

(0 V < VIN < 3.6 V, all other inputs = 0 V)

Output leakage current

(DQ is disabled, 0 V < VOUT < VCC)

Symbol

Limit Values

min.

max.

VIH

2.0

VIL

– 0.5

VOH

2.4

VOL

–

II(L)

– 40

VCC + 0.3

0.8

–

0.4

40

Unit

V

V

V

V

µA

IO(L)

– 40

40

µA

Capacitance

TA = 0 to 70 °C; VDD = 3.3 V ± 0.3 V, f = 1 MHz

Parameter

Symbol

Limit Values

Unit

max. max. max. max.

8M×64 8M×72 16M×64 16M×72

Input capacitance

CI1

45

55

70

80

pF

(A0 to A11, BA0, BA1, RAS, CAS, WE)

Input capacitance (CS0 - CS3)

CI2

25

25

25

30

pF

Input capacitance (CLK0 - CLK3)

CICL

35

38

35

38

pF

Input capacitance (CKE0, CKE1)

CI3

35

38

35

38

pF

Input capacitance (DQMB0 - DQMB7) CI4

13

13

20

20

pF

Input/Output capacitance

(DQ0 - DQ63, CB0 - CB7)

CIO

10

10

15

15

pF

Input Capacitance (SCL, SA0 - 2)

CSC

8

8

8

8

pF

Input/Output capacitance

CSD

10

10

10

10

pF

Semiconductor Group

7

1998-08-01

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