CXK5B18120TM Ver la hoja de datos (PDF) - Sony Semiconductor

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componentes Descripción

Fabricante

CXK5B18120TM

65536-word × 18-bit High Speed Bi-CMOS Static RAM

Sony Semiconductor 

CXK5B18120TM

Electrical Characteristics

DC Characteristics

Item

Symbol

(Vcc = 3.3V±0.3V, GND = 0V, Ta = 0 to +70°C)

Conditions

Min. Typ.∗ Max. Unit

Input leakage current ILI

VIN = GND to Vcc

–10

—

+10 µA

Output leakage current ILO

CE = VIH or OE = VIH or WE = VIL or

UB = VIH or LB = VIH

VI/O = GND to Vcc

–10

—

+10 µA

Average operating

current

Min. Cycle

ICC

Duty =100%

IOUT = 0mA, CE = VIL, VIN = VIH or VIL

—

—

310 mA

Standby current

ISB1

CE ≥ Vcc – 0.2V

VIN ≥ Vcc – 0.2V or VIN ≤ 0.2V

Min. Cycle

ISB2

Duty =100%

CE = VIH, VIN = VIH or VIL

—

—

10 mA

—

—

100 mA

Output high voltage

VOH IOH = –2.0mA

2.4

—

—V

Output low voltage

VOL

IOL = 2.0mA

—

—

0.4 V

* Vcc = 3.3V, Ta = 25°C

I/O Capacitance

(Ta = 25°C, f = 1MHz)

Item

Symbol Conditions Min.

Input capacitance CIN

VIN = 0V

—

I/O capacitance

CI/O

VI/O = 0V

—

Typ.

—

—

Max. Unit

5 pF

7 pF

Note) This parameter is sampled and is not 100% tested.

AC Characteristics

• AC test condition (Vcc = 3.3V±0.3V, Ta = 0 to +70°C)

Item

Input pulse high level

Input pulse low level

Input rise time

Input fall time

Input and output reference level

Output load conditions

Condition

VIH = 3.0V

VIL = 0.0V

tr = 2ns

tf = 2ns

1.4V

Fig. 1

Output load (1)

I/O

Zo=50Ω

RL=50Ω

VL=1.4V

Output load (2)*1

3.3V

1179Ω

I/O

5pF*2

868Ω

*1. For tLZ, tOLZ, tLBLZ, tUBLZ, tHZ, tOHZ, tLBHZ, tUBHZ, tOW, tWHZ

*2. Including scope and jig capacitances.

Fig. 1

–3–

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