MXP1005 Ver la hoja de datos (PDF) - Microsemi Corporation
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MXP1005 Datasheet PDF : 5 Pages
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MXP1005
SANTA ANA DIVISION
Photovoltaic By-Pass Diode
120 Volts, 2.25 Amps
PRODUCT PREVIEW
DESCRIPTION
Large area diode chip for medium current photovoltaic by-
pass applications, or for higher current hybrid applications.
The device is rated for 1A for applications where the device
will be exposed to substantial radiation flux (space). For
other applications, it may be operated at higher currents (see
graph for Vf vs. If). A version with attached leads is
available.
KEY FEATURES
Gold diffused for low forward
voltage
Epitaxial structure minimizes
forward voltage drop
Forward voltage decreases with
radiation exposure
Qualified for space applications
Available in leaded configuration
High voltage for series
applications
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
APPLICATIONS/BENEFITS
Increases efficiency of
photovoltaic arrays
Protects photovoltaic cells from
reverse voltage
MAXIMUM RATINGS @ 25°C (UNLESS OTHERWISE SPECIFIED)
Description
Symbol
Max.
Peak Repetitive Reverse Voltage
VRRM
120
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, Tc≤ 135°C
VRWM
VR
IF(ave)
120
120
2.25
Junction Temperature Range
Storage Temperature Range
Tj
-65 to +150
Tstg
-65 to +200
Unit
Volts
Volts
Volts
Amps
°C
°C
Description
Reverse (Leakage)
Current (in dark)
Forward Voltage
pulse test, pw= 300 µs
Junction Capacitance
Breakdown Voltage
ELECTRICAL PARAMETERS
Symbol
Conditions
IR25
VR= 96 Vdc, Ta= 25°C
IR150
VR= 96 Vdc, Ta= 150°C
VF1
IF= 2. 25 A, Ta= 25°C
Cj1
BVR
VR= 4 Vdc
IR= 200 µA, Ta= 25°C
Min Typ. Max Unit
2
10
µA
4
8
mA
720 840 mV
300
600
pF
120
160
V
Copyright 2002
MXP1005.PDF, 2002-05-03
Microsemi
Santa Ana Division
2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 1
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