MX29F001B Ver la hoja de datos (PDF) - Macronix International

Número de pieza

componentes Descripción

Fabricante

MX29F001B

1M-BIT [128K x 8] CMOS FLASH MEMORY

Macronix International 

READ TIMING WAVEFORMS

VIH

A0~16

VIL

VIH

CE

VIL

WE

VIH

VIL

OE

VIH

VIL

DATA

Q0~7

VOH HIGH Z

VOL

MX29F001T/B

ADD Valid

tCE

tOE

tACC

tDF

tOH

DATA Valid

HIGH Z

COMMAND PROGRAMMING/DATA PROGRAMMING/ERASE OPERATION

DC CHARACTERISTICS VCC = 5V ± 10%

SYMBOL

PARAMETER

MIN. TYP

ICC1 (Read) Operating VCC Current

ICC2

ICC3 (Program)

ICC4 (Erase)

ICCES

VCC Erase Suspend Current

2

MAX. UNIT

30

mA

50

mA

50

mA

50

mA

mA

CONDITIONS

IOUT=0mA, f=5MHz

IOUT=0mA, F=10MHz

In Programming

In Erase

CE=VIH, Erase Suspended

NOTES:

1. VIL min. = -0.6V for pulse width < 20ns.

2. If VIH is over the specified maximum value, programming operation cannot be guaranteed.

3. ICCES is specified with the device de-selected. If the device is read during erase suspend mode, current draw is

the sum of ICCES and ICC1 or ICC2.

4. All current are in RMS unless otherwise noted.

P/N: PM0515

REV. 2.6, DEC. 29, 2003

15

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