MX29F001B Ver la hoja de datos (PDF) - Macronix International

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Fabricante

MX29F001B

1M-BIT [128K x 8] CMOS FLASH MEMORY

Macronix International 

MX29F001T/B

AC CHARACTERISTICS VCC = 5V ± 10%

SYMBOL PARAMETER

tACC

Address to Output Delay

tCE

CE to Output Delay

tOE

OE to Output Delay

tDF

OE High to Output Float (Note1)

tOH

Address to Output hold

29F001T/B-90

MIN. MAX.

90

90

40

0

30

0

29F001T/B-12

MIN. MAX.

120

120

50

0

30

0

UNIT

ns

ns

ns

ns

ns

CONDITIONS

CE=OE=VIL

OE=VIL

CE=VIL

CE=VIL

CE=OE=VIL

TEST CONDITIONS:

• Input pulse levels: 0.45V/2.4V

• Input rise and fall times: <10ns

• Output load: 1 TTL gate + 100pF (Including scope and

jig)

• Reference levels for measuring timing : 0.8V & 2.0V

NOTE:

1. tDF is defined as the time at which the output achieves

the open circuit condition and data is no longer driven.

P/N: PM0515

REV. 2.6, DEC. 29, 2003

14

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