Philips Semiconductors
VHF linear power transistor
Product specification
BLV33
handbook,7h5alfpage
hFE
(1)
50
(2)
25
MGG130
handboo6k,0h0alfpage
Cc
(pF)
400
200
MGG129
0
0
5
10 IC (A) 15
Tj = 25 °C.
(1) VCE = 25 V.
(2) VCE = 5 V.
Fig.5 DC current gain as a function of collector
current; typical values.
0
0
20
VCB (V)
40
IE = ie = 0; f = 1 MHz; Tj = 25 °C.
Fig.6 Collector capacitance as a function of
collector-base voltage; typical values.
handbo1o0k,0h0alfpage
fT
(MHz)
800
600
400
200
0
−0
−5
MGG131
−10 IE (A) −15
VCB = 25 V; f = 100 MHz; Tj = 25 °C.
Fig.7 Transition frequency as a function of emitter
current; typical values.
10
handbook, halfpage
IC
(A)
(1)
(2)
1
MGG118
10−1
0.5
1
1.5 VBE (V) 2
VCE = 25 V.
(1) Th = 70 °C.
(2) Th = 25 °C.
Fig.8 Collector current as a function of
base-emitter voltage; typical values.
1996 Oct 10
6