BLV33 Ver la hoja de datos (PDF) - Philips Electronics
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BLV33 Datasheet PDF : 20 Pages
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Philips Semiconductors
VHF linear power transistor
Product specification
BLV33
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCESM
VCEO
VEBO
IC
IC(AV)
ICM
Ptot
Prf
Tstg
Tj
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
peak collector current
total power dissipation (DC)
RF power dissipation
storage temperature
operating junction temperature
CONDITIONS
VBE = 0
open base
open collector
f > 1 MHz
Tmb = 25 °C
f > 1 MHz; Tmb = 25 °C
MIN.
−
−
−
−
−
−
−
−
−65
−
MAX.
65
33
4
12.5
12.5
20
132
165
+150
200
UNIT
V
V
V
A
A
A
W
W
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-mb(dc) thermal resistance from junction to
mounting base (DC dissipation)
Rth j-mb(rf) thermal resistance from junction to
mounting base (RF dissipation)
Rth mb-h
thermal resistance from mounting
base to heatsink
CONDITIONS
Pdiss = 80 W; Tmb = 82 °C; Th = 70 °C
Pdiss = 80 W; Tmb = 82 °C; Th = 70 °C
Pdiss = 80 W; Tmb = 82 °C; Th = 70 °C
VALUE
1.46
1.17
0.15
UNIT
K/W
K/W
K/W
102
handbook, halfpage
IC
(A)
10
MGG120
(1)
(2)
(3)
handboo2k,0h0alfpage
Ptot
(W)
150
100
MGG119
(2)
(1)
1
1
10
VCE (V)
102
(1) Tmb = 25 °C.
(2) Th = 70 °C.
(3) Second breakdown limit (independent of temperature).
Fig.2 DC SOAR.
1996 Oct 10
50
0
50
Th (°C)
100
(1) Continuous DC (including RF class-A) operation.
(2) Continuous RF operation.
Fig.3 Power derating curves.
3
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