BLV33 Ver la hoja de datos (PDF) - Philips Electronics

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BLV33

VHF linear power transistor

Philips Electronics 

Philips Semiconductors

VHF linear power transistor

Product specification

BLV33

FEATURES

• Diffused emitter ballasting resistors for an optimum

temperature profile

• Gold sandwich metallization ensures excellent

reliability.

APPLICATIONS

• Primarily intended for use in linear VHF amplifiers for

television transmitters and transposers.

DESCRIPTION

NPN silicon planar epitaxial transistor encapsulated in a

1⁄16" 4 fslead SOT147 capstan package with ceramic cap.

All leads are isolated from the stud.

PINNING - SOT147

PIN

SYMBOL

DESCRIPTION

1

c

collector

2

e

emitter

3

b

base

4

e

emitter

handbook, halfpage 2

1

3

4

Top view

c

b

e

MAM270

Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA

RF performance in a common emitter push-pull test circuit.

MODE OF

OPERATION

fvision

(MHz)

CW, class-A

CW, class-AB

224.25

224.25

VCE

IC, IC(ZS)

Th

(V)

(A)

(°C)

70

25

3.2

25

28

0.1

70

dim(1)

(dB)

−55

−55

Po sync(1)

(W)

>16.5

typ. 26

typ. 90

GP

(dB)

>9

typ. 9.7

typ. 6.5

sync compr.(2)

sync in/sync out

(%)

30/25

Notes

1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to

peak sync level.

2. Television service (negative modulation, C.C.I.R. system).

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.

1996 Oct 10

2

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