MUR105S - MUR160S
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-lead thermal resistance
SYMBOL
RӨJL
LIMIT
17
UNIT
°C/W
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
CONDITIONS SYMBOL
MUR105S
MUR110S
Forward voltage per diode (1)
MUR115S
MUR120S IF = 1A,TJ = 25°C
VF
MUR140S
MUR160S
MUR105S
MUR110S
Forward voltage per diode (1)
MUR115S
MUR120S IF = 1A,TJ = 150°C
VF
MUR140S
MUR160S
MUR105S
MUR110S
Reverse current @ rated VR
per diode (2)
MUR115S
MUR120S TJ = 25°C
IR
MUR140S
MUR160S
MUR105S
MUR110S
Reverse current @ rated VR
per diode (2)
MUR115S
TJ = 150°C
MUR120S
IR
MUR140S
MUR160S
MUR105S
MUR110S
Reverse recovery time
MUR115S IF=0.5A ,IR=1.0A
MUR120S IRR=0.25A
trr
MUR140S
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
MUR160S
TYP
-
-
-
-
-
-
-
-
-
-
MAX
0.875
1.250
0.710
1.050
2
5
50
150
25
50
UNIT
V
V
V
V
V
V
V
V
V
V
V
V
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
ns
ns
ns
ns
ns
ns
2
Version:K1701