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NSBA143ZF3T5G(2012) Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza
componentes Descripción
Fabricante
NSBA143ZF3T5G
(Rev.:2012)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
NSBA143ZF3T5G Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
MUN2133, MMUN2133L, MUN5133, DTA143ZE, DTA143ZM3, NSBA143ZF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
Thermal Characteristics (SOT1123) (NSBA143ZF3)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Thermal Resistance, Junction to Lead
Junction and Storage Temperature Range
1. FR4 @ Minimum Pad.
2. FR4 @ 1.0 x 1.0 Inch Pad.
3. FR*4 @ 100 mm2, 1 oz. copper traces, still air.
4. FR*4 @ 500 mm2, 1 oz. copper traces, still air.
Symbol
Max
Unit
(Note 3)
(Note 4)
(Note 3)
(Note 4)
(Note 3)
(Note 4)
(Note 3)
PD
RqJA
RqJL
TJ, Tstg
254
297
2.0
2.4
493
421
193
55 to +150
mW
mW/°C
°C/W
°C/W
°C
Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
CollectorBase Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
CollectorEmitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
EmitterBase Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
CollectorBase Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
CollectorEmitter Breakdown Voltage (Note 5)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
ON CHARACTERISTICS
DC Current Gain (Note 5)
hFE
(IC = 5.0 mA, VCE = 10 V)
Collector *Emitter Saturation Voltage (Note 5)
(IC = 10 mA, IB = 0.3 mA)
VCE(sat)
Input Voltage (off)
(VCE = 5.0 V, IC = 100 mA)
Vi(off)
Input Voltage (on)
(VCE = 0.2 V, IC = 5.0 mA)
Vi(on)
Output Voltage (on)
VOL
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
Output Voltage (off)
VOH
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
Input Resistor
R1
Resistor Ratio
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle v 2%.
R1/R2
Min
50
50
80
4.9
3.3
0.055
Typ
140
0.67
0.91
4.7
0.1
Max Unit
nAdc
100
nAdc
500
mAdc
0.18
Vdc
Vdc
Vdc
0.25
Vdc
Vdc
Vdc
0.2
Vdc
6.1
kW
0.185
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