DTA144WE(2012) Ver la hoja de datos (PDF) - ON Semiconductor

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componentes Descripción

Fabricante

DTA144WE
(Rev.:2012)

Digital Transistors (BRT) R1 = 47 kΩ, R2 = 22 kΩ

ON Semiconductor 

MUN2137, MUN5137, DTA144WE, DTA144WM3, NSBA144WF3

Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max Unit

OFF CHARACTERISTICS

Collector−Base Cutoff Current

(VCB = 50 V, IE = 0)

ICBO

nAdc

−

−

100

Collector−Emitter Cutoff Current

(VCE = 50 V, IB = 0)

ICEO

nAdc

−

−

500

Emitter−Base Cutoff Current

(VEB = 6.0 V, IC = 0)

IEBO

mAdc

−

−

0.13

Collector−Base Breakdown Voltage

(IC = 10 mA, IE = 0)

V(BR)CBO

50

−

Vdc

−

Collector−Emitter Breakdown Voltage (Note 5)

(IC = 2.0 mA, IB = 0)

V(BR)CEO

50

−

Vdc

−

ON CHARACTERISTICS

DC Current Gain (Note 5)

(IC = 5.0 mA, VCE = 10 V)

hFE

80

140

−

Collector *Emitter Saturation Voltage (Note 5)

(IC = 10 mA, IB = 0.3 mA)

VCE(sat)

−

Vdc

−

0.25

Input Voltage (off)

(VCE = 5.0 V, IC = 100 mA)

Vi(off)

Vdc

−

1.7

−

Input Voltage (on)

(VCE = 0.2 V, IC = 3.0 mA)

Vi(on)

Vdc

−

2.7

−

Output Voltage (on)

(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW)

VOL

Vdc

−

−

0.2

Output Voltage (off)

(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)

VOH

4.9

−

Vdc

−

Input Resistor

R1

32.9

47

61.1

kW

Resistor Ratio

5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle v 2%.

R1/R2

1.7

2.1

2.6

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