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MTP1N100E

TMOS E-FET Power Field Effect Transistor

Motorola => Freescale 

MTP1N100E

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

Zero Gate Voltage Drain Current

(VDS = 1000 Vdc, VGS = 0 Vdc)

(VDS = 1000 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Temperature Coefficient (Negative)

Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 0.5 Adc)

Drain–Source On–Voltage (VGS = 10 Vdc)

(ID = 1.0 Adc)

(ID = 0.5 Adc, TJ = 125°C)

Forward Transconductance (VDS = 15 Vdc, ID = 0.5 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 500 Vdc, ID = 1.0 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

Gate Charge

(See Figure 8)

(VDS = 400 Vdc, ID = 1.0 Adc,

VGS = 10 Vdc)

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage (1)

(IS = 1.0 Adc, VGS = 0 Vdc)

(IS = 1.0 Adc, VGS = 0 Vdc, TJ = 125°C)

Reverse Recovery Time

(See Figure 14)

(IS = 1.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

Reverse Recovery Stored Charge

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from contact screw on tab to center of die)

(Measured from the drain lead 0.25″ from package to center of die)

Internal Source Inductance

(Measured from the source lead 0.25″ from package to source bond pad)

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

Symbol

V(BR)DSS

IDSS

IGSS

VGS(th)

RDS(on)

VDS(on)

gFS

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

QT

Q1

Q2

Q3

VSD

trr

ta

tb

QRR

LD

LS

Min

1000

—

—

—

—

2.0

—

—

—

—

0.9

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

Typ

—

1.251

—

—

—

3.0

6.0

6.7

4.86

—

1.32

587

59.6

12.2

9.0

12

28

34

14.6

2.8

6.8

5.2

0.764

0.62

655

42

613

0.957

3.5

4.5

7.5

Max

Unit

—

Vdc

—

mV/°C

µAdc

10

100

100

nAdc

4.0

Vdc

—

mV/°C

9.0

Ohm

Vdc

9.0

9.9

—

mhos

810

pF

120

25

20

ns

25

55

70

21

nC

—

—

—

Vdc

1.0

—

—

ns

—

—

—

µC

nH

—

—

nH

2

Motorola TMOS Power MOSFET Transistor Device Data

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