MT46V128M8 Ver la hoja de datos (PDF) - Micron Technology
Número de pieza
componentes Descripción
Fabricante
MT46V128M8 Datasheet PDF : 74 Pages
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Table 1: Ball/Pin Descriptions (Continued)
TSOP
NUMBERS
2, 5, 8,
11, 56, 59,
62, 65
SYMBOL
DQ0–DQ2
DQ3–DQ5
DQ6, DQ7
TYPE
I/O
DESCRIPTION
Data Input/Output: Data bus for x8
(DQ4–DQ7 are NC for the x4)
PRELIMINARY
1Gb: x4, x8, x16
DDR SDRAM
5, 11, 56,
62
51
16
51
14, 25,
43, 53
19, 50
3, 9, 15, 55, 61
DQ0–DQ2
DQ3
DQS
LDQS
UDQS
NC
DNU
VDDQ
6, 12, 52, 58, 64
1, 18, 33
34, 48, 66
49
VSSQ
VDD
VSS
VREF
I/O
Data Input/Output: Data bus for x4
I/O
Data Strobe: Output with read data, input with write data. DQS is edge-
aligned with read data, centered in write data. It is used to capture data.
For the x16, LDQS is DQS for DQ0–DQ7 and UDQS is DQS for DQ8–DQ15.
Pin 16 (E7) is NC on x4 and x8.
–
No Connect: These pins should be left unconnected.
–
Supply
Supply
Supply
Supply
Supply
Do Not Use: Must float to minimize noise on VREF.
DQ Power Supply: +2.5V ±0.2V. Isolated on the die for improved noise
immunity.
DQ Ground. Isolated on the die for improved noise immunity.
Power Supply: +2.5V ±0.2V.
Ground.
SSTL_2 reference voltage.
09005aef8076894f
1gbDDRx4x8x16_2.fm - Rev. A 3/03 EN
10
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology. Inc.
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