MSS50-800 Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
MSS50-800 Datasheet PDF : 7 Pages
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MSS40, MSS50
Characteristics
Figure 2.
Maximum average power
Figure 3.
dissipation versus average on-state
current
Average and DC on-state current
versus case temperature
P(W)
100
90
α = 180°
80
70
60
MSS40
MSS50
IT(RMS)(A)
80
70
60
50
MSS50
MSS40
50
40
40
30
30
20
180°
α
20
10
α
10
IT(RMS)(A)
0
0
Tcase(°C)
0
10
20
30
40
50
60
70
80
0
25
50
75
100
α = 180°
125
150
t(s) Figure 4.
Relative variation of thermal
impedance versus pulse duration
Figure 5.
Relative variation of gate trigger
current and holding current versus
junction temperature
uc K=[Zth(j-c)/Rth(j-c)]
d 1.0
Pro 0.5
solete 0.2
Ob 0.1
- 1E-3
1E-2
tp(s)
1E-1
1E+0
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
2.5
2.0
1.5
IGT
1.0
IH & IL
0.5
Tj(°C)
0.0
1E+1
-40 -20
0
20 40 60 80 100 120 140 160
roduct(s) Figure 6.
Surge peak on-state current versus Figure 7.
number of cycles
Non-repetitive surge peak on-state
current for a sinusoidal pulse with
width tp < 10 ms, and
corresponding values of I2t
te P ITSM(A)
700
le MSS50
600
so 500
b MSS40
O400
Non repetitive
Tj initial=25°C
MSS50
t=20ms
One cycle
ITSM(A), I2t (A2s)
5000
1000
Tj initial = 25°C
ITSM
MSS50
I2t
Repetitive
300
TC=85°C
MSS40
200
100
0
MSS40
Repetitive
TC=80°C
1
Number of cycles
10
100
1000
100
0.01
dI/dt limitation:
50A/µs
0.10
tp(ms)
1.00
10.00
3/7
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