DCR820SG Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DCR820SG Datasheet PDF : 10 Pages
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DCR820SG
10000
Conditions:
Tj = 125˚C
IT = 320A
VR = 100V
Max
1000
Min
IT
QRA3
100
0.1
dI/dt
25% IRR
IRR
1.0
10
100
Rate of decay of on-state current, dI/dt - (A/µs)
Fig.10 Stored charge
1000
Conditions:
Tj = 125˚C
IT = 320A
VR = 100V
Max
Min
100
10
0.1
1.0
10
100
Rate of decay of on-state current, dI/dt - (A/µs)
Fig.11 Reverse recovery current
12.5
10
7.5
5
I2t
2.5
0.1
0.05
0
0
1
10 1
5 10
50
ms
Cycles at 50Hz
Duration
Fig.12 Surge (non-repetitive) on-state current vs time
(with 50% VRRM @ Tcase = 125˚C)
0.1
Anode side cooled
Double side
cooled
0.01
0.001
0.001
0.01
Conduction Effective thermal resistance
Junction to case ˚C/W
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Double side
0.032
0.034
0.044
0.057
Single side
0.064
0.066
0.076
0.089
0.1
1.0
10
Time - (s)
Fig.13 Maximum (limit) transient thermal impedance
- junction to case
8/10
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