DCR820SG60 Ver la hoja de datos (PDF) - Dynex Semiconductor

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componentes Descripción

Fabricante

DCR820SG60

Phase Control Thyristor

Dynex Semiconductor 

DCR820SG

SURGE RATINGS

Symbol

Parameter

ITSM

Surge (non-repetitive) on-state current

I2t

I2t for fusing

ITSM

Surge (non-repetitive) on-state current

I2t

I2t for fusing

Conditions

10ms half sine; Tcase = 125oC

V = 50% V - 1/4 sine

R

RRM

10ms half sine; Tcase = 125oC

V =0

R

Max. Units

4.8

kA

115 x 103 A2s

6.0

kA

180 x 103 A2s

THERMAL AND MECHANICAL DATA

Symbol

Parameter

Rth(j-c)

Thermal resistance - junction to case

Rth(c-h)

Thermal resistance - case to heatsink

T

Virtual junction temperature

vj

Tstg

Storage temperature range

-

Clamping force

Conditions

Double side cooled

dc

Single side cooled

Anode dc

Cathode dc

Clamping force 12.0kN

with mounting compound

Double side

Single side

On-state (conducting)

Reverse (blocking)

Min. Max. Units

- 0.032 oC/W

- 0.064 oC/W

- 0.064 oC/W

- 0.008 oC/W

- 0.016 oC/W

-

135

oC

-

125

oC

–55 150

oC

10.8 13.2 kN

3/10

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