s MSM10S0000 s ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––
DC Characteristics (VDD = 4.5 to 5.5 V, VSS = 0 V, Tj = -40° to +85°C)
Parameter
Symbol
Condition
Rated Value
Min
Typ [1]
Max
Unit
“H†level input voltage
VIH
“L†level input voltage
VIL
TTL level Schmitt Trigger input Vt+
threshold voltage
Vt-
∆VT
CMOS level Schmitt Trigger Vt+
input threshold voltage
Vt-
∆VT
“H†level output voltage
VOH
“L†level output voltage
VOL
“H†level input current
IIH
“L†level input current
IIL
3-state output leakage current IOZH
IOZL
Stand-by current [2]
IDDS
TTL input
CMOS input
TTL input
CMOS input
–
–
Vt+ - Vt-
–
–
Vt+ - Vt-
IOH = 2, 4, 8, 12, 16, 24 mA
IOL = 2, 4, 8, 12, 16 mA
IOL = 24 or 48 mA
VIH = VDD
VIH = VDD (50 kΩ pull down)
VIL = VSS
VIL = VSS (50 kΩ pull up)
VIL = VSS (3 kΩ pull up)
VOH = VDD
VOL = VSS
VOL = VSS (50 kΩ pull up)
VOL = VSS (3 kΩ pull up)
Output open
VIH = VDD, VIL = VSS
2.2
0.7xVDD
-0.5
-0.5
–
0.8
0.2
–
0.24xVDD
0.6
3.7
–
–
–
20
-10
-250
-5
–
-10
-250
-5
–
–
–
–
–
1.7
1.3
0.4
3.1
1.8
1.3
–
–
–
0.01
100
-0.01
-100
-1.6
0.01
-0.01
-100
-1.6
0.1
VDD+0.5
V
VDD+0.5
V
0.8
V
0.3xVDD
V
2.2
V
–
V
–
V
0.76xVDD
V
–
V
–
V
–
V
0.4
V
0.5
V
10
µA
250
µA
–
µA
-20
µA
-0.5
mA
10
µA
–
µA
-20
µA
-0.5
mA
100
µA
1. Typical condition is VDD = 5.0 V and Tj = 25°C. Typical process.
2. RAM/ROM should be in powerdown mode.
6
Oki Semiconductor