MSK4401G Ver la hoja de datos (PDF) - M.S. Kennedy Corporation
Número de pieza
componentes Descripción
Fabricante
MSK4401G
M.S. Kennedy Corporation
MSK4401G Datasheet PDF : 5 Pages
| |||
ABSOLUTE MAXIMUM RATINGS
V+
High Voltage Supply 75V ○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
V Bias Supply 16V BIAS
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
VIND Logic Input Voltages○ ○ ○ ○ -○ 0.3V to VBIAS +0.3V
IOUT Continuous Output Current○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 29A
IPK
Peak Output Current 41A ○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
θJC Thermal Resistance
TST
(Output Switches @125°C)
3.0°C/W
○
○
○
○
○
○
○
TLD
Storage Temperature Range
○
-55°C to +125°C
○
Lead Temperature Range
T (10 Seconds) +300°C C
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
TJ Case Operating Temperature ○ ○ -40°C to +85°C
Junction Temperature ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ +150°C
ELECTRICAL SPECIFICATIONS
Tc=+25°C unless otherwise specified
Parameter
CONTROL SECTION
VBIAS Quiescent Current
VBIAS Operating Current
Undervoltage Threshold (Falling)
Undervoltage Threshold (Rising)
Low Level Input Voltage 1
High Level Input Voltage 1
Low Level Input Current 1
High Level Input Current 1
OUTPUT BRIDGE
Drain-Source Breakdown Voltage 1
Drain-Source Leakage Current 3
Drain-Source On Voltage 3
Drain-Source On Resistance 4
(Each FET, for thermal calculations only)
SWITCHING CHARACTERISTICS
Rise Time 1
Fall Time 1
Enable Turn-On Prop Delay (Lower) 1
Enable Turn-Off Prop Delay (Lower) 1
Enable Turn-On Prop Delay (Upper) 1
Enable Turn-Off Prop Delay (Upper) 1
Dead Time
Dead Time
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward Voltage 1
Reverse Recovery Time 1
Test Conditions 2
All Inputs Off
f=20KHz, 50% Duty Cycle
VIN=0V
VIN=5V
ID=250µA, All Inputs Off
VDS=70V
ID=29A
ID=29A
V+=29V, RL=1Ω
ID=29A
SWR Resistor=∞
SWR Resistor=∞
SWR Resistor=∞
SWR Resistor=∞
SWR=Open
SWR=12K
ISD=29A
ISD=10A, di/dt=100A/µS
Min.
MSK 4401
Typ.
Max.
Units
-
6
8
mAmp
-
12.5
25
mAmp
5.6
6.6
7.6
Volts
6.1
7.1
8.1
Volts
-
-
0.8
Volts
2.7
-
-
Volts
55
100
140 µAmp
-10
-
+10 µAmp
70
-
-
V
-
-
250 µAmp
-
-
1.25
V
-
-
0.013
Ω
-
120
-
nSec
-
81
-
nSec
-
0.5
2
µSec
-
5
8
µSec
-
5
8
µSec
-
0.5
2
µSec
3.0
5.0
7.0
µSec
0.3
0.6
1.2
µSec
-
2.5
-
Volts
-
120
-
nSec
NOTES:
1 Guaranteed by design but not tested. Typical parameters are representative of actual device performance but are for reference only.
2 VBIAS=+12V, V+=28V, RSENSE A,B=Ground, DIS=0V, EN=0V, SWR=open unless otherwise specified.
3 Measured using a 300µSec pulse with a 2% duty cycle.
4 On Resistance is specified for the internal MOSFET for thermal calculations. It does not include the package pin resistance.
2
Rev. E 11/04
Share Link: