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MSK4360E Ver la hoja de datos (PDF) - M.S. Kennedy Corporation

Número de pieza
componentes Descripción
Fabricante
MSK4360E Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
ABSOLUTE MAXIMUM RATINGS
V+ High Voltage Supply ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 55V
IQ
V+ Quiescent Current ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 0.16A
VIN
Current Command Input ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ±13.5V
+15V Output Current
20mA
-15V Output Current 20mA
IOUT Continuous Output Current ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 10A
IPK
Peak Output Current ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○16A
ELECTRICAL SPECIFICATIONS
OJC Thermal Resistance ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 3.6°C/W
TST Storage Temperature Range
-65°C to +150°C
TLD Lead Temperature Range ○ ○ ○ ○ ○ ○ ○ ○ ○ ○+300°C
(10 Seconds)
TC Case Operating Temperature
T MSK4360 -40°C to +85°C J
MSK4360H/E ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ -55°C to +125°C
Junction Temperature
+150°C
Parameter
Test Conditions
Group A
MSK 4360H/E 3
Subgroup Min. Typ. Max.
PWM
Clock Frequency
REGULATORS
+15 VOUT
-15 VOUT
-15 VOUT Ripple
HALL INPUTS
VIL 1
VIH 1
ANALOG SECTION
Current Command Input Range 1
Current Command Input Current 1
Transconductance 7
20mA Load 6
20mA Load 6
20mA Load
Offset Current
Current Command=0 Volts
Current Monitor 7
@ ±1 Amp Output
Current Monitor Voltage Swing 1
5mA Load
ERROR AMP
E/A OUTPUT Swing 1
5mA Load
Slew Rate 1
Unity Gain Bandwidth 1
Large Signal Voltage Gain 1
OUTPUT SECTION
Voltage Drop Across Bridge (1 Upper & 1 Lower) 1
10 AMPS
Voltage Drop Across Bridge (1 Upper & 1 Lower) 1 10 AMPS @ 150°c Junction
Leakage Current 1
All switches off, V+=44V, 150°C Junction
Diode VSD 1
trr 1
Dead Time 1
4
15
5,6 13.6
1,2,3
1,2,3
4
14.25
-15.75
-
-
-
-
3.0
-
-13.5
-
-
4
1.9
5,6
1.8
1
-25
2,3
-50
4 0.475
5,6 0.45
-
-12
-
-12
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
16
22
-
-
-
-
-
-
-
2
2
0
0
0.5
0.5
-
-
3
1.8
400
0.8
1.6
-
-
86
2
17
18.4
15.75
-14.25
250
0.8
-
+13.5
1.5
2.1
2.2
25
50
0.525
0.55
+12
+12
-
-
-
-
1.92
750
1.6
-
-
MSK 4360 2
Min. Typ. Max.
Units
15
16
17
KHz
-
-
-
KHz
14.25
-15.75
-
- 15.75 VOLTS
- -14.25 VOLTS
-
250 mV
-
-
0.8 VOLTS
3.0
-
- VOLTS
-13.5
-
1.8
-
-50
-
0.45
-
-12
- +13.5 VOLTS
-
1.5
mA
2
2.2 A/V
-
-
A/V
0
50
mA
-
-
mA
0.5 0.55 V/A
-
-
V/A
-
+12 VOLTS
-12
-
+12 VOLTS
-
3
- V/µSec
-
1.8
-
MHz
-
400
-
V/mV
-
0.8
- VOLTS
-
1.6 1.92 VOLTS
-
-
750
µA
-
-
1.6 VOLTS
-
86
-
nSec
-
2
-
µSec
NOTES:
1 Guaranteed by design but not tested. Typical parameters are representative of actual device performance but are for reference only.
2 Industrial grade and "E" suffix devices shall be tested to subgroups 1 and 4 unless otherwise specified.
3 Military grade devices ("H" Suffix) shall be 100% tested to Subgroups 1, 2, 3 and 4.
4 Subgroups 5 and 6 testing available upon request.
5 Subgroup 1, 4 TA = TC = +25°C
2, 5 TA = TC =+125°C
3, 6 TA = TC = -55°C
6 Maximum power dissipation must be limited according to voltage regulator power dissipation.
7 Measurements do not include offset current at 0V current command.
2
Rev. G 11/01

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