MSK4252(2013) Ver la hoja de datos (PDF) - M.S. Kennedy Corporation
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MSK4252 Datasheet PDF : 6 Pages
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ABSOLUTE MAXIMUM RATINGS 8
V+
High
Voltage
Supply
9
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○ 75V
VIN Current Command Input ○ ○ ○ ○ ○ ○ ○ ○ ○ ○±13.5V
+Vcc ○
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○ +16V
-Vcc
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-18V
IOUT Continuous Output Current ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 30A
IPK
Peak Output Current ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 50A
ESD Rating Class 1 ○
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ELECTRICAL SPECIFICATIONS
θJC Thermal Resistance @ 125°C ○ ○ ○ ○ ○ ○ ○ ○ 1.5°C/W
TST Storage Temperature Range ○ ○ ○ -65°C to +150°C
TLD Lead Temperature Range ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ +300°C
(10 Seconds)
TC Case Operating Temperature
MSK4252 ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ -40°C to +125°C
MSK4252H ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ -55°C to +125°C
TJ Junction Temperature ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ +150°C
All Ratings: Tc=+25°C Unless Otherwise Specified
Parameter
POWER SUPPLY REQUIREMENTS
Test Conditions
Group A
Subgroup
45
+Vcc
-Vcc
PWM
@ +15V
@ -15V
1,2,3
1,2,3
Free Running Frequency
4
5,6
CONTROL
Transconductance 7
Current Monitor 7
±30 Amps Output
±30 Amps Output
4,5,6
4,5,6
Output Offste
ERROR AMP
@ 0 Volts Command
4
5,6
Input Voltage Range 1
-
Slew Rate 1
-
Output Voltage Swing 1
-
Gain Bandwidth Product 1
-
Large Signal Voltage Gain 1
-
OUTPUT
Rise Time 1
-
Fall Time 1
-
Leakage Current 1
@ 64V, +150°C Junction
-
Voltage Drop Across Bridge (1 Upper and 1 Lower) 1
@ 30 Amps
-
Voltage Drop Across Bridge (1 Upper and 1 Lower) 1 @30Amps, +150°C Junction
-
Drain-Source On Resistance (Each MOSFET) 6
@ 30 Amps, 150°C Junction
-
Diode VSD 1
@ 30 Amps, Each FET
-
TRR 1
IF=30 Amps, di/dt=100A/μS
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Dead Time 1
-
MSK 4252H 3
Min. Typ. Max.
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66
85
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16
35
23.5
25
26.5
21.25
25
28.75
2.4
0.16
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3
0.2
±5.0
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3.6
0.22
±50.0
±75.0
±11 ±12
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6.5
8
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±12 ±13
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6.5
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175
275
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100
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100
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750
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1
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1.83
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0.026
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2.6
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280
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2
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MSK 4252 2
Min. Typ. Max.
Units
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66
85
mA
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16
35
mA
22
25
28
KHz
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KHz
2.4
0.16
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3
0.2
±5.0
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3.6
0.22
±50.0
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Amp/Volt
V/Amp
mAmp
mAmp
±11
6.5
±12
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175
±12
8
±13
6.5
275
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Volts
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V/μSec
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Volts
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MHz
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V/mV
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100
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nSec
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100
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nSec
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750 μAmps
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0.3
Volts
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0.6
Volts
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0.026
Ω
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2.6
Volts
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280
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nSec
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2
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μSec
NOTES:
1 Guaranteed by design but not tested. Typical parameters are representative of actual device
performance but are for reference only.
2 Industrial grade devices shall be tested to subgroups 1 and 4 unless otherwise specified.
3 Military grade devices ("H" Suffix) shall be 100% tested to Subgroups 1, 2, 3 and 4.
4 Subgroups 5 and 6 testing available upon request.
5 Subgroup 1, 4 TA = TC = +25°C
2, 5 TA = TC = +125°C
3, 6 TA = TC = -55°C
6 This is to be used for MOSFET thermal calculation only.
7 Measurements do not include offset current at 0V current command.
8 Continuous operation at or above absolute maximum ratings may adversly effect the device
performance and/or life cycle.
9 When applying power to the device, apply the low voltage followed by the high voltage or alternatively, apply both at the
same time. Do not apply high voltage without low voltage present.
2
8548-108 Rev. F 9/13
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