MSK4251G Ver la hoja de datos (PDF) - M.S. Kennedy Corporation
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MSK4251G Datasheet PDF : 6 Pages
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ABSOLUTE MAXIMUM RATINGS 5
V+ High Voltage Supply ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 75V
VIN Current Command Input ○ ○ ○ ○ ○ ○ ○ ○ ○ ○±13.5V
+Vcc +16V ○
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-Vcc
-18V
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IOUT Continuous Output Current ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 10A
IPK
Peak Output Current ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 20A
θJC
Thermal Resistance @ 125°C ○
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3.0°C/W
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TST Storage Temperature Range ○
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-40°C to +150°C
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TLD Lead Temperature Range ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ +300°C
(10 Seconds)
TC Case Operating Temperature
MSK4251 -40°C to +85°C ○
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TJ Junction Temperature ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ +150°C
ELECTRICAL SPECIFICATIONS
Parameter
POWER SUPPLY REQUIREMENTS
+Vcc
-Vcc
PWM
Free Running Frequency
CONTROL
Transconductance 4
Current Monitor 4
Output Offset
ERROR AMP
Input Voltage Range 1
Slew Rate 1
Output Voltage Swing 1
Gain Bandwidth Product 1
Large Signal Voltage Gain 1
OUTPUT
Rise Time 1
Fall Time 1
Leakage Current 1
Voltage Drop Across Bridge (1 Upper and 1 Lower) 1
Voltage Drop Across Bridge (1 Upper and 1 Lower) 1
Drain-Source On Resistance (Each MOSFET) 3 1
Diode VSD 1
trr 1
Dead Time 1
All Ratings: Tc=+25°C Unless Otherwise Specified
Test Conditions 2
MSK 4251
Min.
Typ.
Max.
Units
@ +15V
@ -15V
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70
85
mA
-
17
35
mA
22
25
28
KHz
±10 Amps Output
±10 Amps Output
@ 0 Volts Command
1.8
0.425
-
2
0.5
±5.0
2.2
0.575
±35.0
Amp/Volt
V/Amp
mAmp
±11
±12
-
6.5
8
-
±12
±13
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-
6.5
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175
275
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Volts
V/µSec
Volts
MHz
V/mV
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100
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nSec
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100
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nSec
@ 64V, +150°C Junction
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750
µAmps
@ 10 Amps
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0.3
Volts
@10Amps, +150°C Junction
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0.6
Volts
@ 10 Amps, 150°C Junction
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0.026
Ω
@ 10 Amps, Each FET
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2.6
Volts
IF=10 Amps, di/dt=100A/µS
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280
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nSec
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2
-
µSec
NOTES:
1 Guaranteed by design but not tested. Typical parameters are representative of actual device
performance but are for reference only.
2 ±Vcc=+15V, V+=28V unless otherwise specified.
3 This is to be used for MOSFET thermal calculation only.
4 Measurements do not include offset current at 0V current command.
5 Continuous operation at or above absolute maximum ratings may adversly effect the device performance
and/or life cycle.
2
Rev. B 1/05
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